T555401N-DDW Atmel, T555401N-DDW Datasheet - Page 24

• Manufacturer Part Number: T555401N-DDW
• Manufacturer: Atmel

Specifications of T555401N-DDW

• Screening Level: Industrial
• Lead Free Status / Rohs Status: Supplier Unconfirmed

7. Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Note:
8. Electrical Characteristics
T
Notes:
24
Parameters
RF frequency range
Supply current
(see
Supply current
(see
Clamp voltage
Programming voltage
Programming time
Startup time
Data retention
Programming cycles
Supply voltage
Coil voltage
Resonance capacitor
Damping resistor
amb
Parameters
Maximum DC current into Coil 1/Coil 2
Maximum AC current into Coil 1/Coil 2, f = 125 kHz
Power dissipation (dice)
(free-air condition, time of application: 1s)
Electrostatic discharge maximum to MIL-Standard
883 C method 3015
Operating ambient temperature range
Storage temperature range (data retention reduced)
Maximum assembly temperature for less than 5 min
= 25°C; f
Figure 5-11 on page
Figure 5-11 on page
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
1. Since EEPROM performance may be influenced by assembly and packaging, Atmel confirms the parameters for
2. Typical value selected by mask option.
T5554
DOW (= die-on-wafer) and ICs assembled in standard package.
RF
(1)
= 125 kHz, reference terminal is V
(1)
23)
23)
Test Conditions
Read and write over the full
temperature range
Programming over the full temperature
range
10 mA current into Coil1/2
From on-chip HV-Generator
Read and write
Read-mode, T = –30°C
Read and write
Programming, RF field not damped
SS
Symbol
I
V
T
T
T
P
I
coil p
coil
amb
max
stg
sld
tot
Symbol
C
C
t
V
V
t
retention
n
res(A)
res(B)
startup
V
V
V
I
I
coil pp
coil pp
R
f
V
cycle
DD
DD
t
RF
DD
DD
P
pp
cl
D
(2)
(2)
–40 to +150
–40 to +85
Value
100,000
100
150
10
20
2
Min.
100
189
9.5
16
10
72
Typ.
125
100
210
300
18
80
5
Max.
11.5
150
200
231
7.5
1.6
2.0
6.0
20
10
88
4
4576D–RFID–12/06
Unit
mW
mA
mA
kV
°C
°C
°C
Cycles
Years
Unit
kHz
µA
µA
ms
ms
pF
pF
W
V
V
V
V
V
V