BP 104 S R18R OSRAM Opto Semiconductors Inc, BP 104 S R18R Datasheet - Page 2

• Manufacturer Part Number: BP 104 S R18R
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BP 104 S R18R

• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 20V
• Forward Voltage: 1.3V
• Responsivity: 0.62A/W
• Peak Wavelength: 850nm
• Dark Current (max): 30nA
• Power Dissipation: 150mW
• Light Current: 55uA
• Rise Time: 20ns
• Fall Time: 20ns
• Photodiode Material: Si
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 2
• Package Type: SMT
• Lead Free Status / Rohs Status: Compliant

Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Sperrspannung
Reverse voltage
Verlustleistung,
Total power dissipation
Kennwerte (
Characteristics (
Bezeichnung
Parameter
Fotostrom
Photocurrent
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
Spectral range of sensitivity
S
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Abmessung der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
Halbwinkel
Half angle
Dunkelstrom,
Dark current
Spektrale Fotoempfindlichkeit, λ = 850 nm
Spectral sensitivity
Quantenausbeute, λ = 850 nm
Quantum yield
Leerlaufspannung,
Open-circuit voltage
2007-04-18
= 10% von
= 10% of
V
S
R
max
T
S
V
= 5 V
A
max
R
= 25 ° C, Normlicht A,
T
= 10 V
A
T
= 25 ° C
A
E
= 25 ° C, standard light A,
V
= 1000 lx
T
= 2856 K)
T
= 2856 K)
Symbol
Symbol
T
V
P
Symbol
Symbol
I
λ
λ
A
L
L
ϕ
I
S
η
V
P
R
2
λ
op
S max
R
tot
O
×
×
;
B
W
T
stg
Wert
Value
– 40 … + 100
20
150
Wert
Value
55 (≥40)
850
400 … 1100
4.84
2.20 × 2.20
± 60
2 (≤ 30)
0.62
0.90
360 (≥ 280)
BP 104 S, BP 104 SR
Einheit
Unit
° C
V
mW
Einheit
Unit
nA/lx
nm
nm
mm
mm × mm
Grad
deg.
nA
A/W
Electrons
Photon
mV
2