BG3123E6327XT Infineon Technologies, BG3123E6327XT Datasheet - Page 6

• Manufacturer Part Number: BG3123E6327XT
• Manufacturer: Infineon Technologies

Specifications of BG3123E6327XT

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Depletion
• Continuous Drain Current: 0.025A
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 32@5V@Amp A/30@5V@Amp BdB
• Noise Figure (max): 1.8(Typ)dB
• Package Type: SOT-363
• Pin Count: 6
• Forward Transconductance (typ): 0.3S
• Input Capacitance (typ)@vds: 1.9@5V@Gate 1@Amp A/1.5@5V@Gate 1@Amp BpF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

Output characteristics I
V
amp. A
Gate 1 current I
V
amp. A
G2S
DS
mA
µA
120
= 5V, V
18
14
12
10
80
60
40
20
= 4V, V
8
6
4
2
0
0
0
0
2
G2S
0.4
G1S
G1
4
= Parameter in V
= Parameter in V
= (V
0.8
6
G1S
D
8
1.2
=
)
(V
10
DS
V
)
V
V
V
1.5
1.4
1.3
1.2
4
3.5
3
2.5
2
DS
G1S
14
2
6
Output characteristics I
V
amp. B
Gate 1 current I
V
amp. B
G2S
DS
mA
120
µA
= 5V, V
18
14
12
10
80
60
40
20
= 4V, V
8
6
4
2
0
0
0
0
2
G2S
0.4
G1S
4
G1
= Parameter in V
= Parameter in V
= (V
0.8
6
G1S
D
8
1.2
=
)
10
(V
BG3123...
2007-04-26
DS
V
1.7
1.6
1.5
1.3
1.0
)
V
V
V
DS
G1S
2.5
4
3
2
14
2