BF1204 NXP Semiconductors, BF1204 Datasheet - Page 3

• Manufacturer Part Number: BF1204
• Description: Two dual-gate MOS Field-Effect Transistors in a plastic SOT363 package
• Manufacturer: NXP Semiconductors

Specifications of BF1204

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 10V
• Power Gain (typ)@vds: 34@5VdB
• Noise Figure (max): 11dB
• Package Type: SOT-363
• Pin Count: 6
• Input Capacitance (typ)@vds: 1.7@5V@Gate 1/3.3@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.85@5VpF
• Reverse Capacitance (typ): 0.015@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
2010 Sep 16
handbook, halfpage
Per MOS-FET; unless otherwise specified
V
I
I
I
P
T
T
R
SYMBOL
SYMBOL
D
G1
G2
stg
j
DS
tot
Dual N-channel dual gate MOS-FET
th j-s
(mW)
P tot
250
200
150
100
50
0
0
drain-source voltage
drain current (DC)
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to soldering point
Fig.2 Power derating curve.
50
PARAMETER
100
150
T s (°C)
PARAMETER
MGS359
200
T
s
 102 C
3
CONDITIONS





65

MIN.
VALUE
240
10
30
10
10
200
+150
150
Product specification
MAX.
BF1204
UNIT
K/W
V
mA
mA
mA
mW
C
C
UNIT