BLF202 NXP Semiconductors, BLF202 Datasheet - Page 9

BLF202

Manufacturer Part Number
BLF202
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF202

Application
HF/VHF
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
1A
Drain Source Voltage (max)
40V
Output Power (max)
2W
Power Gain (typ)@vds
13@12.5VdB
Frequency (max)
175MHz
Package Type
CDIP SMD
Pin Count
8
Forward Transconductance (typ)
0.135S
Drain Source Resistance (max)
4000@15Vmohm
Input Capacitance (typ)@vds
5.3@12.5VpF
Output Capacitance (typ)@vds
7.8@12.5VpF
Reverse Capacitance (typ)
1.8@12.5VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Mode Of Operation
CW Class-B
Number Of Elements
1
Power Dissipation (max)
5700mW
Vswr (max)
50
Screening Level
Military
Lead Free Status / Rohs Status
Compliant

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Philips Semiconductors
2003 Sep 19
handbook, halfpage
handbook, halfpage
HF/VHF power MOS transistor
Class B-operation; V
R
Fig.11 Input impedance as a function of frequency
GS
( )
Z i
250
125
125
= 237 ; P
0
0
Fig.13 Definition of MOS impedance.
(series of components); typical values.
L
Z i
= 2 W.
50
DS
= 12.5 V; I
r i
x i
100
DQ
Z L
= 20 mA;
MBA379
150
f (MHz)
MGP119
200
9
handbook, halfpage
handbook, halfpage
Class B-operation; V
R
Fig.12 Load impedance as a function of frequency
Class B-operation; V
R
Fig.14 Power gain as a function of frequency;
GS
(dB)
GS
G p
( )
Z L
= 237 ; P
= 237 ; P
20
15
10
50
40
30
20
10
5
0
0
0
0
(series components); typical values.
typical values.
L
L
= 2 W.
= 2 W.
50
50
DS
DS
= 12.5 V; I
= 12.5 V; I
100
100
DQ
DQ
= 20 mA;
= 20 mA;
R L
X L
Product specification
150
150
f (MHz)
f (MHz)
BLF202
MGP121
MGP120
200
200

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