MRF1550T1 Freescale Semiconductor, MRF1550T1 Datasheet - Page 2
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MRF1550T1
Manufacturer Part Number
MRF1550T1
Description
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF1550T1.pdf
(12 pages)
Specifications of MRF1550T1
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
12A
Drain Source Voltage (max)
40V
Output Power (max)
50W
Power Gain (typ)@vds
10(Min)dB
Frequency (max)
175MHz
Package Type
TO-272 EP
Pin Count
6
Drain Source Resistance (max)
500@5Vmohm
Input Capacitance (typ)@vds
500(Max)@12.5VpF
Output Capacitance (typ)@vds
250(Max)@12.5VpF
Reverse Capacitance (typ)
35(Max)@12.5VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
50(Min)%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
165000mW
Vswr (max)
20
Screening Level
Military
Lead Free Status / Rohs Status
Not Compliant
MRF1550T1 MRF1550FT1
2
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
RF Characteristics (In Freescale Test Fixture)
Zero Gate Voltage Drain Current
Gate - Source Leakage Current
Gate Threshold Voltage
Drain- Source On - Voltage
Drain- Source On - Voltage
Input Capacitance (Includes Input Matching Capacitance)
Output Capacitance
Reverse Transfer Capacitance
Common - Source Amplifier Power Gain
Drain Efficiency
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
DS
GS
DS
GS
GS
DS
DS
DS
DD
DD
= 60 Vdc, V
= 12.5 Vdc, I
= 12.5 Vdc, V
= 12.5 Vdc, V
= 12.5 Vdc, V
= 10 Vdc, V
= 5 Vdc, I
= 10 Vdc, I
= 12.5 Vdc, P
= 12.5 Vdc, P
D
D
= 1.2 A)
GS
DS
D
= 4.0 Adc)
GS
GS
GS
out
out
= 800 μA)
= 0 Vdc)
= 0 Vdc)
= 50 Watts, I
= 50 Watts, I
= 0 V, f = 1 MHz)
= 0 V, f = 1 MHz)
= 0 V, f = 1 MHz)
Characteristic
DQ
DQ
(T
= 500 mA)
= 500 mA)
C
= 25°C unless otherwise noted)
f = 175 MHz
f = 175 MHz
Symbol
R
V
V
I
I
DS(on)
C
GS(th)
DS(on)
C
C
G
GSS
DSS
oss
η
rss
iss
ps
Min
10
50
—
—
—
—
—
—
—
1
Typ
—
—
—
—
—
—
—
—
—
—
Freescale Semiconductor
Max
500
250
0.5
0.5
35
—
—
1
3
1
RF Device Data
μAdc
μAdc
Unit
Vdc
Vdc
pF
pF
pF
dB
%
Ω