MRF9030MBR1 Freescale Semiconductor, MRF9030MBR1 Datasheet - Page 2
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MRF9030MBR1
Manufacturer Part Number
MRF9030MBR1
Description
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF9030MBR1.pdf
(16 pages)
Specifications of MRF9030MBR1
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Power Gain (typ)@vds
20dB
Frequency (max)
1GHz
Package Type
TO-272 EP
Pin Count
3
Forward Transconductance (typ)
2.7S
Input Capacitance (typ)@vds
49@26VpF
Output Capacitance (typ)@vds
27@26VpF
Reverse Capacitance (typ)
1.2@26VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
41%
Mounting
Surface Mount
Mode Of Operation
2-Tone
Number Of Elements
1
Power Dissipation (max)
139000mW
Vswr (max)
5
Screening Level
Military
Lead Free Status / Rohs Status
Not Compliant
2
MRF9030MR1 MRF9030MBR1
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Two - Tone Common - Source Amplifier Power Gain
Two - Tone Drain Efficiency
3rd Order Intermodulation Distortion
Input Return Loss
Two - Tone Common - Source Amplifier Power Gain
Two - Tone Drain Efficiency
3rd Order Intermodulation Distortion
Input Return Loss
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
f1 = 945.0 MHz, f2 = 945.1 MHz)
(V
f1 = 945.0 MHz, f2 = 945.1 MHz)
(V
f1 = 945.0 MHz, f2 = 945.1 MHz)
(V
f1 = 945.0 MHz, f2 = 945.1 MHz)
(V
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
(V
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
(V
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
(V
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
DS
DS
GS
DS
DS
GS
DS
DS
DS
DS
DD
DD
DD
DD
DD
DD
DD
DD
= 65 Vdc, V
= 26 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 26 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
DS
D
D
D
D
(In Freescale Test Fixture)
GS
GS
out
out
out
out
out
out
out
out
= 100 μAdc)
= 250 mAdc)
= 0.7 Adc)
= 2 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
= 30 W PEP, I
Characteristic
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
(T
= 250 mA,
= 250 mA,
= 250 mA,
= 250 mA,
= 250 mA,
= 250 mA,
= 250 mA,
= 250 mA,
c
= 25°c Unless Otherwise Noted)
GS
GS
GS
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
Symbol
V
V
V
I
I
I
C
DS(on)
C
IMD
IMD
GS(th)
GS(Q)
C
G
G
IRL
IRL
DSS
DSS
GSS
g
oss
η
η
rss
iss
fs
ps
ps
Min
—
—
—
—
—
—
—
—
18
37
—
—
—
—
—
—
2
3
0.23
40.5
Typ
2.9
3.8
2.7
1.2
- 31
- 13
- 31
- 12
49
27
20
41
20
—
—
—
Freescale Semiconductor
Max
0.4
- 28
10
—
—
—
—
—
—
—
—
—
—
- 9
1
1
4
5
RF Device Data
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dBc
dBc
pF
pF
pF
dB
dB
dB
dB
%
%
S