BUZ71A STMicroelectronics, BUZ71A Datasheet
BUZ71A
Manufacturer Part Number
BUZ71A
Description
MOSFET Power TO-220 N-CH 50V 30A
Manufacturer
STMicroelectronics
Specifications of BUZ71A
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
13 A
Power Dissipation
40 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220
Fall Time
35 ns
Minimum Operating Temperature
- 65 C
Rise Time
65 ns
Lead Free Status / Rohs Status
No
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BUZ71A
Manufacturer:
HARRS
Quantity:
5 000
Company:
Part Number:
BUZ71A
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
BUZ71A
Manufacturer:
ST
Quantity:
20 000
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
July 1999
BUZ71A
Symbol
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
HIGH CURRENT CAPABILITY
175
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
V
V
V
P
T
I
DGR
I
DM
T
stg
DS
GS
D
tot
j
TYPE
o
C OPERATING TEMPERATURE
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
DIN HUMIDITY CATEGORY (DIN 40040)
IEC CLIMATIC CATEGORY (DIN IEC 68-1)
®
DS(on)
= 0.1
V
50 V
DSS
< 0.12
R
c
N - CHANNEL 50V - 0.1 - 13A TO-220
Parameter
DS(on)
GS
= 25
GS
= 20 k )
= 0)
o
C
c
13 A
= 25
I
D
o
C
STripFET
INTERNAL SCHEMATIC DIAGRAM
POWER MOSFET
-65 to 175
55/150/56
TO-220
Value
175
50
50
13
52
40
E
20
1
BUZ71A
2
3
Unit
o
o
W
V
V
V
A
A
C
C
1/8
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