BUZ71A STMicroelectronics, BUZ71A Datasheet - Page 2

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BUZ71A

Manufacturer Part Number
BUZ71A
Description
MOSFET Power TO-220 N-CH 50V 30A
Manufacturer
STMicroelectronics
Datasheets

Specifications of BUZ71A

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
13 A
Power Dissipation
40 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220
Fall Time
35 ns
Minimum Operating Temperature
- 65 C
Rise Time
65 ns
Lead Free Status / Rohs Status
No

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BUZ71A
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
SWITCHING
2/8
V
Symbol
Symbol
Symbol
Symbol
Symbol
R
R
R
V
g
(BR)DSS
t
t
thj-case
thj-amb
I
I
C
E
DS(on)
C
C
GS(th)
fs
d(on)
d(of f)
I
GSS
DSS
AR
t
t
oss
AS
iss
rss
r
f
( )
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
Parameter
Parameter
Parameter
Parameter
j
DS
= 25
= 0)
o
GS
C, I
= 0)
D
= I
j
I
V
V
V
V
V
V
V
R
AR
max)
Parameter
D
DS
DS
GS
DS
GS
DS
DS
DD
GS
= 250 A
, V
= V
= 25 V
= 30 V
= Max Rating
= Max Rating
=
= 10 V
= 25 V
= 50
case
DD
GS
= 25 V)
20 V
= 25
Test Conditions
Test Conditions
Test Conditions
Test Conditions
I
D
I
f = 1 MHz
I
D
V
o
= 1 mA
D
C unless otherwise specified)
= 9 A
GS
= 9 A
V
I
D
GS
= 0
= 8 A
= 10 V
T
j
= 125
Max
Max
V
GS
o
= 0
C
Min.
Min.
Min.
Min.
2.1
50
4
3.75
62.5
Value
Typ.
Typ.
Typ.
Typ.
760
100
0.1
7.7
14
50
30
20
65
70
35
3
Max.
Max.
Max.
Max.
0.12
10
100
1
4
o
o
Unit
Unit
Unit
Unit
Unit
C/W
C/W
mJ
nA
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
A
A

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