M29DW324DB70N6 STMicroelectronics, M29DW324DB70N6 Datasheet - Page 24
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M29DW324DB70N6
Manufacturer Part Number
M29DW324DB70N6
Description
Flash 32M (4Mx8 or 2Mx16)
Manufacturer
STMicroelectronics
Datasheet
1.M29DW324DB70N6.pdf
(49 pages)
Specifications of M29DW324DB70N6
Data Bus Width
8 bit, 16 bit
Memory Type
NOR Flash
Memory Size
32 Mbit
Architecture
Sectored
Interface Type
CFI
Access Time
70 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Maximum Operating Current
10 mA
Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
TSOP-48
Organization
4 MB x 8
Lead Free Status / Rohs Status
No
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29DW324DB70N6
Manufacturer:
ST
Quantity:
8 670
M29DW324DT, M29DW324DB
Table 12. DC Characteristics
Note: 1. Sampled only, not 100% tested.
24/49
I
Symbol
CC3
I
CC1
V
I
V
V
V
V
V
I
CC2
V
I
I
LKO
LO
PP
OH
PP
OL
LI
2. In Dual operations the Supply Current will be the sum of
IH
ID
IL
(1,2)
(2)
Input Leakage Current
Output Leakage Current
Supply Current (Read)
Supply Current (Standby)
Supply Current (Program/
Erase)
Input Low Voltage
Input High Voltage
Voltage for
Acceleration
Current for
Acceleration
Output Low Voltage
Output High Voltage
Identification Voltage
Program/Erase Lockout Supply
Voltage
Parameter
V
V
PP
PP
/WP
/WP
Program
Program
Controller active
Program/Erase
V
V
0V
E = V
RP = V
Test Condition
0V
E = V
CC
CC
I
OH
I
I
CC1
OL
f = 6MHz
= 3.0V ±10%
= 3.0V ±10%
V
= –100
IL
= 1.8mA
V
(read) and
CC
OUT
, G = V
CC
IN
±0.2V,
V
±0.2V
V
PP
µ
V
V
V
CC
A
PP
IH
/WP = V
CC
IL
I
,
CC3
/WP =
or V
(program/erase).
IH
PP
V
0.7V
CC
–0.5
11.5
11.5
Min
1.8
–0.4
CC
V
CC
Max
12.5
0.45
12.5
100
0.8
2.3
±1
±1
10
20
20
15
+0.3
Unit
mA
mA
mA
mA
µ
µ
µ
V
V
V
V
V
V
V
A
A
A