SI6967DQ-T1 Vishay, SI6967DQ-T1 Datasheet - Page 2
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SI6967DQ-T1
Manufacturer Part Number
SI6967DQ-T1
Description
MOSFET Small Signal 8V 5A 1.1W
Manufacturer
Vishay
Datasheet
1.SI6967DQ-T1-E3.pdf
(5 pages)
Specifications of SI6967DQ-T1
Configuration
Dual Dual Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.03 Ohms
Drain-source Breakdown Voltage
- 8 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
+/- 5 A
Power Dissipation
1.1 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSSOP-8
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
No
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI6967DQ-T1
Manufacturer:
VISHAY
Quantity:
3 000
Company:
Part Number:
SI6967DQ-T1-E3
Manufacturer:
VISHAY
Quantity:
12 863
Si6967DQ
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
a
a
a
J
= 25 °C, unless otherwise noted
a
Symbol
R
V
I
t
t
I
I
GS(th)
D(on)
DS(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
t
t
t
SD
rr
fs
gs
gd
r
f
g
V
V
I
DS
D
DS
≅ - 1 A, V
I
= - 6 V, V
F
= - 6.4 V, V
V
V
V
V
V
= - 1.25 A, dI/dt = 100 A/µs
V
V
I
V
DS
GS
GS
GS
S
DS
V
DS
DS
DS
= - 1.25 A, V
DD
Test Conditions
≥ - 8 V, V
= - 4.5 V, I
= - 2.5 V, I
= - 1.8 V, I
= V
= - 6.4 V, V
= - 8 V, I
= 0 V, V
= - 6 V, R
GEN
GS
GS
GS
, I
= - 4.5 V, I
= - 4.5 V, R
D
GS
= 0 V, T
GS
D
= - 250 µA
D
D
D
= - 5.0 A
GS
GS
L
= - 4.5 V
= - 5.0 A
= - 4.0 A
= - 3.0 A
= ± 8 V
= 6 Ω
= 0 V
= 0 V
D
J
= 70 °C
G
= - 5.0 A
= 6 Ω
- 0.45
Min.
- 30
- 0.68
0.024
0.033
0.048
Typ.
4.5
3.6
18
20
20
30
85
50
50
S-81221-Rev. D, 02-Jun-08
Document Number: 70811
± 100
0.030
0.045
0.070
Max.
- 1.1
- 25
150
100
- 1
40
50
60
90
Unit
nA
µA
nC
ns
Ω
V
A
S
V