SI6967DQ-T1 Vishay, SI6967DQ-T1 Datasheet - Page 4

• Manufacturer Part Number: SI6967DQ-T1
• Description: MOSFET Small Signal 8V 5A 1.1W
• Manufacturer: Vishay

Specifications of SI6967DQ-T1

• Configuration: Dual Dual Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: - 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: +/- 5 A
• Power Dissipation: 1.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Si6967DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70811.
www.vishay.com
4
- 0.2
- 0.4
- 0.6
0.0
0.8
0.6
0.4
0.2
30
10
0.01
1
0.1
0.00
- 50
2
1
10
-4
- 25
Source-Drain Diode Forward Voltage
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.2
V
Single Pulse
SD
0
0.4
- Source-to-Drain Voltage (V)
I
Threshold Voltage
T
D
J
10
= 250 µA
25
- Temperature (°C)
-3
T
J
= 150 °C
0.6
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
T
10
100
J
-2
= 25 °C
1.0
125
Square Wave Pulse Duration (s)
1.2
150
10
-1
0.06
0.05
0.04
0.03
0.02
0.01
1
30
25
20
15
10
5
0
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
V
GS
2
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
0.1
P
Single Pulse Power
- Gate-to-Source Voltage (V)
DM
JM
- T
A
t
1
= P
Time (s)
I
t
2
D
DM
4
S-81221-Rev. D, 02-Jun-08
= 5.0 A
Document Number: 70811
Z
thJA
thJA
1
100
(t)
t
t
1
2
= 115 °C/W
6
10
600
30
8