SI4450DY Vishay, SI4450DY Datasheet - Page 2

• Manufacturer Part Number: SI4450DY
• Description: MOSFET Power 60V 7.5A 2.5W
• Manufacturer: Vishay

Specifications of SI4450DY

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.024 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 21 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 11 ns
• Lead Free Status / Rohs Status: No

Si4450DY
Vishay Siliconix
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
50
40
30
20
10
0
0
2
b
b
V
V
DS
Output Characteristics
GS
b
- Drain-to-Source Voltage (V)
= 10 V thru 6 V
J
= 25 °C, unless otherwise noted
4
b
Symbol
R
V
6
I
t
t
I
I
DS(on)
V
GS(th)
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
R
t
SD
t
t
rr
fs
gs
gd
r
f
g
g
5 V
8
4, 3 V
V
V
I
DS
DS
D
I
≅ 1 A, V
F
= 30 V, V
V
= 60 V, V
10
V
V
V
V
V
V
V
= 2.1 A, dI/dt = 100 A/µs
DS
DS
I
S
GS
DD
DS
DS
GS
DS
Test Conditions
= 2.1 A, V
= 0 V, V
= V
= 6.0 V, I
= 60 V, V
= 5 V, V
= 30 V, R
= 10 V, I
= 15 V, I
GEN
GS
GS
GS
, I
= 10 V, R
= 10 V, I
= 0 V, T
GS
D
GS
D
D
GS
D
= 250 µA
GS
L
= ± 20 V
= 7.5 A
= 7.5 A
= 6.5 A
= 10 V
= 30 Ω
= 0 V
= 0 V
J
D
g
= 55 °C
= 7.5 A
= 6 Ω
50
40
30
20
10
0
0
1
V
Min.
Transfer Characteristics
20
GS
2
1
2
- Gate-to-Source Voltage (V)
T
3
0.020
0.025
Typ.
18.5
0.75
C
7.7
8.3
31
16
11
41
21
46
S09-0393-Rev. F, 09-Mar-09
= 125 °C
Document Number: 70144
a
4
± 100
0.024
Max.
0.03
1.2
5.8
20
50
30
20
80
40
80
- 55 °C
1
5
25 °C
6
Unit
nC
nA
µA
ns
Ω
Ω
V
A
S
V
7