SI4450DY Vishay, SI4450DY Datasheet - Page 3

• Manufacturer Part Number: SI4450DY
• Description: MOSFET Power 60V 7.5A 2.5W
• Manufacturer: Vishay

Specifications of SI4450DY

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.024 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 21 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 11 ns
• Lead Free Status / Rohs Status: No

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70144
S09-0393-Rev. F, 09-Mar-09
0.05
0.04
0.03
0.02
0.01
0.00
20
10
10
1
8
6
4
2
0
0
0
0
V
I
Source-Drain Diode Forward Voltage
D
GS
0.2
= 7.5 A
On-Resistance vs. Drain Current
10
= 30 V
7
V
T
SD
V
J
Q
GS
= 150 °C
g
- Source-to-Drain Voltage (V)
0.4
- Total Gate Charge (nC)
I
= 6 V
D
- Drain Current (A)
Gate Charge
14
20
0.6
21
30
0.8
T
J
V
= 25 °C
GS
28
40
1.0
= 10 V
1.2
35
50
2400
2000
1600
1200
0.06
0.05
0.04
0.03
0.02
0.01
0.00
800
400
2.0
1.6
1.2
0.8
0.4
0.0
0
- 50
4
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
C
V
I
D
rss
GS
10
= 7.5 A
5
I
= 10 V
D
V
V
C
T
GS
DS
= 7.5 A
oss
J
0
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
20
6
25
Capacitance
C
iss
50
30
7
Vishay Siliconix
75
Si4450DY
40
8
www.vishay.com
100
50
9
125
150
10
60
3