SI4450DY Vishay, SI4450DY Datasheet - Page 3
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SI4450DY
Manufacturer Part Number
SI4450DY
Description
MOSFET Power 60V 7.5A 2.5W
Manufacturer
Vishay
Datasheet
1.SI4450DY-T1-E3.pdf
(5 pages)
Specifications of SI4450DY
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.024 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.5 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
21 ns
Minimum Operating Temperature
- 55 C
Rise Time
11 ns
Lead Free Status / Rohs Status
No
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4450DY
Manufacturer:
SI
Quantity:
20 000
Company:
Part Number:
SI4450DY-T1
Manufacturer:
VISHAP
Quantity:
1 071
Part Number:
SI4450DY-T1
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
Company:
Part Number:
SI4450DY-T1-E3
Manufacturer:
ST
Quantity:
500
Part Number:
SI4450DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70144
S09-0393-Rev. F, 09-Mar-09
0.05
0.04
0.03
0.02
0.01
0.00
20
10
10
1
8
6
4
2
0
0
0
0
V
I
Source-Drain Diode Forward Voltage
D
GS
0.2
= 7.5 A
On-Resistance vs. Drain Current
10
= 30 V
7
V
T
SD
V
J
Q
GS
= 150 °C
g
- Source-to-Drain Voltage (V)
0.4
- Total Gate Charge (nC)
I
= 6 V
D
- Drain Current (A)
Gate Charge
14
20
0.6
21
30
0.8
T
J
V
= 25 °C
GS
28
40
1.0
= 10 V
1.2
35
50
2400
2000
1600
1200
0.06
0.05
0.04
0.03
0.02
0.01
0.00
800
400
2.0
1.6
1.2
0.8
0.4
0.0
0
- 50
4
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
C
V
I
D
rss
GS
10
= 7.5 A
5
I
= 10 V
D
V
V
C
T
GS
DS
= 7.5 A
oss
J
0
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
20
6
25
Capacitance
C
iss
50
30
7
Vishay Siliconix
75
Si4450DY
40
8
www.vishay.com
100
50
9
125
150
10
60
3