SI6415DQ-T1 Vishay, SI6415DQ-T1 Datasheet - Page 3

• Manufacturer Part Number: SI6415DQ-T1
• Description: MOSFET Small Signal 30V 6.5A 1.5W
• Manufacturer: Vishay

Specifications of SI6415DQ-T1

• Configuration: Single Triple Drain Quad Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.019 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: +/- 6.5 A
• Power Dissipation: 1.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70639
S-80682-Rev. C, 31-Mar-08
0.035
0.028
0.021
0.014
0.007
10
30
25
20
15
10
0
8
6
4
2
0
5
0
0
0
0
V
I
D
On-Resistance vs. Drain Current
DS
= 6.5 A
V
10
6
GS
V
= 15 V
2
DS
Q
Output Characteristics
= 4.5 V
V
g
I
GS
D
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
- Drain Current (A)
= 10 thru 4 V
Gate Charge
12
20
4
18
30
V
6
GS
= 10 V
3 V
24
40
8
30
50
10
4500
3600
2700
1800
900
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
30
25
20
15
10
5
0
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
V
I
D
GS
= 6.5 A
V
V
1
6
= 10 V
DS
GS
Transfer Characteristics
0
T
- Drain-to-Source Voltage (V)
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
C
25 °C
T
oss
25
Capacitance
C
12
2
= 125 °C
50
Vishay Siliconix
18
3
75
Si6415DQ
- 55 °C
100
www.vishay.com
C
24
4
iss
125
150
30
5
3