SI6415DQ-T1 Vishay, SI6415DQ-T1 Datasheet - Page 4

• Manufacturer Part Number: SI6415DQ-T1
• Description: MOSFET Small Signal 30V 6.5A 1.5W
• Manufacturer: Vishay

Specifications of SI6415DQ-T1

• Configuration: Single Triple Drain Quad Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.019 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: +/- 6.5 A
• Power Dissipation: 1.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Si6415DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70639.
www.vishay.com
4
- 0.2
- 0.4
- 0.6
0.01
0.0
0.8
0.6
0.4
0.2
20
10
0.1
1
0.00
- 50
2
1
10
-4
Source-Drain Diode Forward Voltage
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
0.25
V
T
SD
J
= 150 °C
0
- Source-to-Drain Voltage (V)
T
0.50
Threshold Voltage
I
J
D
- Temperature (°C)
= 250 µA
25
Single Pulse
10
0.75
50
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
T
75
J
1.00
= 25 °C
100
1.25
125
10
Square Wave Pulse Duration (s)
-2
1.50
150
10
-1
0.10
0.08
0.06
0.04
0.02
60
50
40
30
20
10
0
0
0.01
0
0
On-Resistance vs. Gate-to-Source Voltage
V
2
GS
1
0.1
- Gate-to-Source Voltage (V)
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
4
- T
Time (s)
t
A
1
= P
S-80682-Rev. C, 31-Mar-08
t
2
Document Number: 70639
DM
1
Z
6
thJA
thJA
t
t
1
2
I
(t)
D
10
= 83 °C/W
= 6.5 A
8
10
30
30
10