SI3443DV-T1 Vishay, SI3443DV-T1 Datasheet
SI3443DV-T1
Specifications of SI3443DV-T1
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SI3443DV-T1 Summary of contents
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... DS DS(on) 0.065 @ V = −4 0.090 @ V = −2.7 V −20 GS 0.100 @ V = −2 Ordering Information: Si3443DV-T1—E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current continuous Source Current (Diode Conduction) a ...
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... Si3443DV Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...
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... Source-to-Drain Voltage (V) SD Document Number: 71741 S-32559—Rev. E, 29-Dec-03 1200 1000 0.20 0.16 0.12 0. 25_C J 0.04 0.00 1.0 1.2 1.4 Si3443DV Vishay Siliconix Capacitance C iss 800 600 400 C oss 200 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...
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... Si3443DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 0 250 mA D 0.1 0.0 −0.1 −0.2 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...