SI3443DV-T1 Vishay, SI3443DV-T1 Datasheet - Page 4

• Manufacturer Part Number: SI3443DV-T1
• Description: MOSFET Small Signal 20V 4.4A 2W
• Manufacturer: Vishay

Specifications of SI3443DV-T1

• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Si3443DV
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
4
−0.1
−0.2
0.4
0.3
0.2
0.1
0.0
0.01
0.01
0.1
0.1
−50
2
1
2
1
10
10
−4
−4
−25
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
I
T
Threshold Voltage
D
J
= 250 mA
− Temperature (_C)
25
10
Single Pulse
−3
50
10
−3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
75
10
100
−2
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
150
10
−2
10
−1
10
1
−1
25
20
15
10
5
0
10
−2
10
10
−1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Single Pulse Power
− T
t
1
A
Time (sec)
1
1
= P
t
2
DM
Z
thJA
thJA
100
S-32559—Rev. E, 29-Dec-03
t
t
1
2
(t)
Document Number: 71741
10
= 90_C/W
100
600
10
600