H27U518S2CTP-BC HYNIX SEMICONDUCTOR, H27U518S2CTP-BC Datasheet - Page 29

• Manufacturer Part Number: H27U518S2CTP-BC
• Description: 58T1892
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27U518S2CTP-BC

• Memory Type: Flash - NAND
• Memory Size: 512Mbit
• Memory Configuration: 64M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 1.0 / Dec. 2008
Vcc
GND
Rp value guidence
Rp (min) =
where IL is the sum of the input currents of all devices tied to the R/B pin.
Rp(max) is determined by maximum permissible limit of tr
Device
Figure 18 : Ready / Busy Pin Electrical Specifications
Vcc (Max.) - V
R/B
open drain output
I
OL +
Rp
L
200n
100n
OL
(Max.)
ibusy
=
Ready Vcc
2.4
1.8
50
1k
@ Vcc = 3.3V, Ta = 25°C, C
Fig. Rp vs tr, tf & Rp vs ibusy
ibusy
3.2V
tf
512 Mbit (64 M x 8 bit) NAND Flash
tf
100
L
1.2
1.8
2k
V
V
OL
Rp (ohm)
OL
: 0.4V, V
150
1.8
3k
0.8
L
=50pF
Busy
OH
: 2.4V
H27U518S2C Series
200
0.6
1.8
4k
tr
2m
1m
V
OH
29