H27U518S2CTP-BC HYNIX SEMICONDUCTOR, H27U518S2CTP-BC Datasheet - Page 33

• Manufacturer Part Number: H27U518S2CTP-BC
• Description: 58T1892
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27U518S2CTP-BC

• Memory Type: Flash - NAND
• Memory Size: 512Mbit
• Memory Configuration: 64M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

the data to a valid block. These additional Bad Blocks can be identified as attempts to program or erase them will give
errors in the Status Register.
does not affect the data in other pages in the same block, the block can be replaced by re-programming the current data
and copying the rest of the replaced block to an available valid block.
NOTE :
1. An error occurs on n
2. Data in Block A is copied to same location in Block B which is valid block.
3. N
4. Bad block table should be updated to prevent from eraseing or programming Block A
Write Protect Operation
Rev 1.0 / Dec. 2008
Over the lifetime of the device additional Bad Blocks may develop. In this case the block has to be replaced by copying
Unlike the case of odd page which carries a possibility of affecting previous page, the failure of a page program operation
Refer to Table 17 and Figure 23 for the recommended procedure to follow if an error occurs during an operation.
th
data of block A which is in controller buffer memory is copied into n
th
page of the Block A during program or erase operation.
Operation
Program
Erase
Read
Figure 23 : Bad Block Replacement
Table 17 : Block Failure
512 Mbit (64 M x 8 bit) NAND Flash
Recommended Procedure
ECC (with 1bit/528byte)
th
Block Replacement
Block Replacement
page of Block B
H27U518S2C Series
33