GT28F160C3TA90 Intel, GT28F160C3TA90 Datasheet - Page 31
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GT28F160C3TA90
Manufacturer Part Number
GT28F160C3TA90
Description
Flash Mem Parallel 3V/3.3V 16M-Bit 1M x 16 90ns 48-Pin UBGA
Manufacturer
Intel
Datasheet
1.GT28F160C3TA90.pdf
(68 pages)
Specifications of GT28F160C3TA90
Package
48UBGA
Density
16 Mb
Architecture
Sectored
Block Organization
Asymmetrical
Location Of Boot Block
Top
Typical Operating Supply Voltage
3|3.3 V
Sector Size
8KByte x 8|64KByte x 31
Support Of Common Flash Interface
Yes
Timing Type
Asynchronous
Operating Temperature
-40 to 85 °C
Interface Type
Parallel
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
GT28F160C3TA90
Manufacturer:
OSRAM
Quantity:
5 634
5.6.1
Datasheet
Figure 7. Example Power Supply Configurations
Program Protection
In addition to the flexible block locking, the V
hardware write protection of all blocks in the flash device. When V
any Program or Erase operation will result in an error, prompting the corresponding status-register
bit (SR[3]) to be set.
NOTE:
1. A resistor can be used if the V
Designing with the Advanced+ Boot Block Flash Memory Architecture for details.
Low Voltage and 12 V Fast Programming
12 V Fast Programming
Absolute Write Protection With V
System Supply
12 V Supply
System Supply
12 V Supply
(Note 1)
10
CC
K
supply can sink adequate current based on resistor value. See AP-657
PP
V
V
V
V
Intel
CC
CC
PP
V
PP
PPLK
PP
£
Advanced+ Boot Block Flash Memory (C3)
programming voltage can be held low for absolute
System Supply
System Supply
Low-Voltage Programming
Absolute Write Protection via Logic Signal
Low-Voltage Programming
Prot#
(Logic Signal)
PP
is below or equal to V
V
V
V
V
CC
PP
CC
PP
PPLK
0645_06
31
,