BC847CWE6327 Infineon Technologies, BC847CWE6327 Datasheet - Page 3

• Manufacturer Part Number: BC847CWE6327
• Description: Trans GP BJT NPN 45V 0.1A 3-Pin SOT-323 T/R
• Manufacturer: Infineon Technologies
• Type: NPNr

Specifications of BC847CWE6327

• Package: 3SOT-323
• Supplier Package: SOT-323
• Pin Count: 3
• Minimum Dc Current Gain: 420@2mA@5V
• Maximum Operating Frequency: 250(Typ) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Base Emitter Saturation Voltage: 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA V
• Maximum Collector Emitter Saturation Voltage: 0.25@0.5mA@10mA|0.6@5mA@100mA V
• Maximum Collector Base Voltage: 50 V
• Maximum Collector Emitter Voltage: 45 V
• Maximum Emitter Base Voltage: 6 V

Maximum Ratings
Parameter
Collector-emitter voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Collector-emitter voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Collector-base voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Emitter-base voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Collector current
Peak collector current, t
Total power dissipation-
T
T
T
T
Junction temperature
Storage temperature
1
Thermal Resistance
Parameter
Junction - soldering point
BC846-BC850
BC847F
BC847L3-BC848L3
BC846W-BC850W
For calculation of R
S
S
S
S
≤ 71 °C, BC846-BC850
≤ 128 °C, BC847F
≤ 135 °C, BC847L3-BC848L3
≤ 124 °C, BC846W-BC850W
thJA
please refer to Application Note Thermal Resistance
p
≤ 10 ms
1)
3
Symbol
V
V
V
V
I
I
P
T
T
Symbol
R
C
CM
j
stg
CEO
CES
CBO
EBO
tot
thJS
-65 ... 150
Value
BC846...-BC850...
Value
≤ 240
≤ 105
≤ 90
≤ 60
330
250
250
250
100
200
150
65
45
30
80
50
30
80
50
30
6
6
6
2010-06-28
Unit
V
mA
mW
°C
Unit
K/W