HY27US08281A-TPCB Hynix, HY27US08281A-TPCB Datasheet - Page 9

• Manufacturer Part Number: HY27US08281A-TPCB
• Description: Flash Mem Parallel 3.3V 128M-Bit 16M x 8 10us 48-Pin TSOP-I
• Manufacturer: Hynix

Specifications of HY27US08281A-TPCB

• Package: 48TSOP-I
• Cell Type: NAND
• Density: 128 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3.3 V
• Sector Size: 16KByte x 1024
• Support Of Page Mode: Yes
• Timing Type: Asynchronous
• Operating Temperature: 0 to 70 °C
• Interface Type: Parallel

Rev 0.6 / Nov. 2005
NOTE:
1. With the CE# don’t care option CE# high during latency time does not stop the read operation
CLE
H
H
X
X
X
X
L
L
L
L
L
ALE
H
H
L
L
L
L
L
X
X
X
X
CE#
L
H
(1)
X
X
X
L
L
L
L
L
L
Rising
Rising
Rising
Rising
Rising
WE#
H
H
X
X
X
X
Table 6: Mode Selection
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
Falling
RE#
H
H
H
H
H
H
X
X
X
X
0V/Vcc
WP#
X
X
H
H
H
X
X
H
H
L
Read Mode
Write Mode
Data Input
Sequential Read and Data Output
During Read (Busy)
During Program (Busy)
During Erase (Busy)
Write Protect
Stand By
HY27US(08/16)281A Series
Command Input
Address Input(3 cycles)
Command Input
Address Input(3 cycles)
MODE
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