GP1S58VJ000F Sharp Electronics, GP1S58VJ000F Datasheet - Page 4

• Manufacturer Part Number: GP1S58VJ000F
• Manufacturer: Sharp Electronics
• Type: Transmissiver

Specifications of GP1S58VJ000F

• Number Of Elements: 1
• Output Device: Phototransistor
• Gap Width: 5mm
• Slit Width: 0.5mm
• Reverse Breakdown Voltage: 6V
• Collector-emitter Voltage: 35V
• Forward Current: 50mA
• Collector Current (dc) (max): 20mA
• Power Dissipation: 75mW
• Fall Time: 20000ns
• Rise Time: 15000ns
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

■ Absolute Maximum Ratings
∗
∗
∗
■ Electro-optical Characteristics
1 Refer to Fig. 1, 2, 3
2 Pulse width ≤ 100 μ s, Duty ratio = 0.01
3 For 5s or less
Output
Output Collector dark current
∗ 3
Transfer
teristics
charac-
Input
Input
Operating temperature
Storage temperature
Soldering temperature
∗ 1
∗ 1, 2
∗ 1
Forward voltage
Peak forward voltage
Reverse current
Collector current
Collector-emitter saturation voltage
Response time
Forward current
Peak forward current
Collector power dissipation
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Parameter
Parameter
Rise time
Fall time
Symbol
V
V
T
T
T
I
V
P
I
I
FM
P
CEO
ECO
opr
stg
sol
F
C
C
R
Symbol
V
V
I
CE(sat)
V
CEO
I
I
t
t
FM
R
C
r
f
− 40 to + 100
F
− 25 to + 85
Rating
260
50
75
35
20
75
1
6
6
V
CE
(T
4
I
= 2V, I
F
a
V
= 25˚C)
= 40mA, I
Unit
mW
mW
mA
mA
˚C
˚C
˚C
CE
V
V
V
A
= 5V, I
Condition
I
V
I
C
FM
F
V
= 2mA, R
= 20mA
CE
R
= 0.5A
= 20V
= 3V
F
C
= 20mA
= 0.2mA
L
= 100 Ω
MIN.
0.5
−
−
−
−
−
−
TYP.
1.25
−
−
−
3
1
3
4
Sheet No.: D2-A02702EN
GP1S58VJ000F
MAX.
100
1.4
0.4
10
15
15
20
4
(T
a
= 25˚C)
Unit
mA
μ A
nA
μ s
V
V
V