GP1S58VJ000F Sharp Electronics, GP1S58VJ000F Datasheet - Page 7

• Manufacturer Part Number: GP1S58VJ000F
• Manufacturer: Sharp Electronics
• Type: Transmissiver

Specifications of GP1S58VJ000F

• Number Of Elements: 1
• Output Device: Phototransistor
• Gap Width: 5mm
• Slit Width: 0.5mm
• Reverse Breakdown Voltage: 6V
• Collector-emitter Voltage: 35V
• Forward Current: 50mA
• Collector Current (dc) (max): 20mA
• Power Dissipation: 75mW
• Fall Time: 20000ns
• Rise Time: 15000ns
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Fig.13 Detecting Position Characteristics (1)
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.
100
50
0
−2.5
−2 −1.5 −1 −0.5
Shield moving distance L (mm)
0
Shield
0.5
I
T
F
a
=20mA, V
=25˚C
−
1
0
1.5
L
Sensor
+
CE
=5V
2
2.5
7
Fig.14 Detecting Position Characteristics (2)
100
50
0
−2
Shield moving distance L (mm)
−1
0
I
T
F
a
=20mA, V
Sensor
=25˚C
1
Sheet No.: D2-A02702EN
Shield
GP1S58VJ000F
CE
=5V
+
−
2
0