STM8L151G3U6 STMicroelectronics, STM8L151G3U6 Datasheet - Page 71
STM8L151G3U6
Manufacturer Part Number
STM8L151G3U6
Description
IC MCU 8BIT 8KB FLASH 28UFQFPN
Manufacturer
STMicroelectronics
Series
STM8L EnergyLiter
Datasheet
1.STM8L151G3U6.pdf
(110 pages)
Specifications of STM8L151G3U6
Core Processor
STM8
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, IrDA, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, DMA, IR, POR, PWM, WDT
Number Of I /o
26
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 18x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-UFQFN
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11494
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM8L151G3U6
Manufacturer:
STMicroelectronics
Quantity:
10 000
Part Number:
STM8L151G3U6
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STM8L151G3U6TR
Manufacturer:
SAMSUNG
Quantity:
340
Company:
Part Number:
STM8L151G3U6TR
Manufacturer:
STMicroelectronics
Quantity:
10 000
STM8L151x2, STM8L151x3
7.3.5
Table 32.
1. Data based on characterization results, not tested in production.
2. Conforming to JEDEC JESD22a117
3. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation
4. Data based on characterization performed on the whole data memory.
Symbol
N
t
RET
V
t
I
RW
prog
prog
addresses a single byte.
DD
(2)
(3)
Operating voltage
(all modes, read/write/erase)
Programming time for 1 or 64 bytes (block)
erase/write cycles (on programmed byte)
Programming time for 1 to 64 bytes (block)
write cycles (on erased byte)
Programming/ erasing consumption
Data retention (program memory) after 10000
erase/write cycles at T
(3 and 6 suffix)
Data retention (program memory) after 10000
erase/write cycles at T
(3 suffix)
Data retention (data memory) after 300000
erase/write cycles at T
(3 and 6 suffix)
Data retention (data memory) after 300000
erase/write cycles at T
(3 suffix)
Erase/write cycles (program memory)
Erase/write cycles (data memory)
Flash program and data EEPROM memory
Memory characteristics
T
Table 31.
1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware
Flash memory
A
Symbol
= -40 to 125 °C unless otherwise specified.
V
registers (only in Halt mode). Guaranteed by characterization, not tested in production.
RM
RAM and hardware registers
Parameter
Data retention mode
A
A
A
A
= –40 to +85 °C
= –40 to +125 °C
= –40 to +85 °C
= –40 to +125 °C
Parameter
Doc ID 018780 Rev 2
(1)
Halt mode (or Reset)
T
T
A
A
T
T
=+25 °C, V
=+25 °C, V
T
f
A
A
SYSCLK
A
Conditions
T
T
(3 and 6 suffix),
T
T
= –40 to +105 °C
= –40 to +125 °C
RET
RET
= –40 to +85 °C
RET
RET
Conditions
(3 suffix) or
(3 suffix)
= +125 °C
= +125 °C
= +85 °C
= +85 °C
= 16 MHz
DD
DD
= 3.0 V
= 1.8 V
1.65
Min
300
30
30
10
1.65
Min
5
5
(4)
(1)
(1)
(1)
(1)
(1)
(1)
Electrical parameters
Typ
Typ
0.7
6
3
Max
Max
3.6
(1)
kcycles
years
Unit
71/110
Unit
mA
ms
ms
V
V