STM8L151C3T6 STMicroelectronics, STM8L151C3T6 Datasheet - Page 71

• Manufacturer Part Number: STM8L151C3T6
• Description: IC MCU 8BIT 8KB FLASH 48LQFP
• Manufacturer: STMicroelectronics
• Series: STM8L EnergyLiter

Specifications of STM8L151C3T6

• Core Processor: STM8
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: I²C, IrDA, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, IR, POR, PWM, WDT
• Number Of I /o: 40
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 28x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-LQFP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11492

STM8L151x2, STM8L151x3
7.3.5
Table 32.
1. Data based on characterization results, not tested in production.
2. Conforming to JEDEC JESD22a117
3. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation
4. Data based on characterization performed on the whole data memory.
Symbol
N
t
RET
V
t
I
RW
prog
prog
addresses a single byte.
DD
(2)
(3)
Operating voltage
(all modes, read/write/erase)
Programming time for 1 or 64 bytes (block)
erase/write cycles (on programmed byte)
Programming time for 1 to 64 bytes (block)
write cycles (on erased byte)
Programming/ erasing consumption
Data retention (program memory) after 10000
erase/write cycles at T
(3 and 6 suffix)
Data retention (program memory) after 10000
erase/write cycles at T
(3 suffix)
Data retention (data memory) after 300000
erase/write cycles at T
(3 and 6 suffix)
Data retention (data memory) after 300000
erase/write cycles at T
(3 suffix)
Erase/write cycles (program memory)
Erase/write cycles (data memory)
Flash program and data EEPROM memory
Memory characteristics
T
Table 31.
1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware
Flash memory
A
Symbol
= -40 to 125 °C unless otherwise specified.
V
registers (only in Halt mode). Guaranteed by characterization, not tested in production.
RM
RAM and hardware registers
Parameter
Data retention mode
A
A
A
A
= –40 to +85 °C
= –40 to +125 °C
= –40 to +85 °C
= –40 to +125 °C
Parameter
Doc ID 018780 Rev 2
(1)
Halt mode (or Reset)
T
T
A
A
T
T
=+25 °C, V
=+25 °C, V
T
f
A
A
SYSCLK
A
Conditions
T
T
(3 and 6 suffix),
T
T
= –40 to +105 °C
= –40 to +125 °C
RET
RET
= –40 to +85 °C
RET
RET
Conditions
(3 suffix) or
(3 suffix)
= +125 °C
= +125 °C
= +85 °C
= +85 °C
= 16 MHz
DD
DD
= 3.0 V
= 1.8 V
1.65
Min
300
30
30
10
1.65
Min
5
5
(4)
(1)
(1)
(1)
(1)
(1)
(1)
Electrical parameters
Typ
Typ
0.7
6
3
Max
Max
3.6
(1)
kcycles
years
Unit
71/110
Unit
mA
ms
ms
V
V