KMZ52,115 NXP Semiconductors, KMZ52,115 Datasheet - Page 3

• Manufacturer Part Number: KMZ52,115
• Manufacturer: NXP Semiconductors

Specifications of KMZ52,115

• Power Dissipation: 130mW
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Package Type: SO
• Operating Supply Voltage (typ): 5V
• Operating Supply Voltage (max): 8V
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
QUICK REFERENCE DATA
Notes
1. The compensation coil generates a field H
2. Average power consumption of the flipping coil, defined by current, pulse duration and pulse repetition rate may not
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
2000 Jun 09
V
S
V
R
R
A
R
I
t
V
P
T
T
I
I
P
V
R
flip
flip
comp
flip (max)
SYMBOL
SYMBOL
stg
amb
SYMBOL
CC
offset
comp
CC
tot
flip (max)
isol
bridge
comp
flip
th j-a
Magnetic Field Sensor
become zero if H
exceed the specified limit, see Chapter “Limiting values”.
bridge supply voltage
sensitivity (uncompensated)
offset voltage per supply voltage
bridge resistance
compensation coil resistance
field factor of compensation coil; note 1
resistance of set/reset coil
recommended flipping current for stable operation; note 2
flip pulse duration; note 2
bridge supply voltage
total power dissipation
storage temperature
maximum operating temperature
maximum compensation current
maximum flipping current
maximum flipping power dissipation
voltage between isolated systems:
flip coil and Wheatstone bridge;
compensation coil and Wheatsone bridge;
flip coil and compensation coil
terminal resistance from junction to ambient
ext
= H
comp
.
PARAMETER
PARAMETER
PARAMETER
comp
= A
comp
3
I
comp
in addition to the external field H
12
1
100
19
1
1
MIN.
1.5
800
65
40
MIN.
VALUE
105
5
16
0
2
170
22
2
3
TYP.
1000
8
130
+150
15
1500
50
60
ext
Product specification
125
MAX.
. Sensor output will
8
+1.5
3
300
25
3
100
MAX.
1200 mA
KMZ52
UNIT
K/W
V
mW
mA
mA
mW
V
C
C
UNIT
V
mV/V
k
mV/V
------------- -
A/m
--------- -
kA/m
mA
UNIT
s