KMA199E.115 NXP Semiconductors, KMA199E.115 Datasheet

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KMA199E.115

Manufacturer Part Number
KMA199E.115
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of KMA199E.115

Operating Temperature (min)
-40C
Operating Supply Voltage (typ)
5V
Lead Free Status / Rohs Status
Compliant
1. Product profile
1.1 General description
1.2 Features
The KMA199E is a magnetic angle sensor system. The MagnetoResistive (MR) sensor
bridges and the mixed signal Integrated Circuit (IC) are integrated into a single package.
This angular measurement system KMA199E is pre-programmed, pre-calibrated and
therefore, ready to use.
The KMA199E allows user specific adjustments of angular range, zero angle and
clamping voltages. The settings are stored permanently in an Electrically Erasable
Programmable Read-Only Memory (EEPROM).
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KMA199E
Programmable angle sensor
Rev. 01 — 18 October 2007
High precision sensor for magnetic
angular measurement
Programmable user adjustments,
including zero angle and angular range
Single package sensor system
Magnet-lost and power-lost detection
Built-in transient protection
User-programmable 32-bit identifier
Ready to use
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Ratiometric output voltage
Independent from the magnetic field
strength above 35 kA/m
Programming via One-Wire Interface
(OWI)
Fail-safe EEPROM
High temperature range
Factory calibrated
Product data sheet

Related parts for KMA199E.115

KMA199E.115 Summary of contents

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KMA199E Programmable angle sensor Rev. 01 — 18 October 2007 1. Product profile 1.1 General description The KMA199E is a magnetic angle sensor system. The MagnetoResistive (MR) sensor bridges and the mixed signal Integrated Circuit (IC) are integrated into a ...

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... NXP Semiconductors 2. Pinning information Table 1. Pin Symbol GND 3 OUT/DIGINT 3. Ordering information Table 2. Type number KMA199E KMA199E_1 Product data sheet Pinning Description supply voltage DD ground analog output voltage or digital interface Ordering information Package Name Description - plastic single-ended multi-chip package; 6 interconnections; 3 in-line leads Rev. 01 — ...

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ref DDS DDA I REGULATOR REGULATOR ref V V SSE DDS V SINP MUX AMPLIFIER V SINN COSP V COSN V SSS TP0 TP1 TP2 DIGITAL FILTER TEST CONTROL AND AVERAGING Q_PUMP ...

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... NXP Semiconductors 5. Functional description The KMA199E amplifies two orthogonal differential signals, which are delivered by MR sensor bridges and converts them into the digital domain. The angle is calculated using the COordinate Rotation DIgital Computer (CORDIC) algorithm. After a digital-to-analog conversion the analog signal is provided to the output. Thus, the output is a linear representation of the angular value ...

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... NXP Semiconductors Fig 2. Angular measurement directions Since the Anisotropic MR (AMR) effect is periodic over 180 , the sensor output is also 180 -periodic, whereas the angle is calculated relative to a freely programmable zero angle. The dashed line indicates the mechanical zero degree position. 6. Diagnostic features The KMA199E provides four diagnostic features: 6 ...

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... NXP Semiconductors 6.3 Power-lost detection The power-lost detection circuits enable the detection of an interrupted supply or ground line of the KMA199E. In case of a power-lost condition, two internal switches within the sensor are closed, connecting the pin of the analog output with the pins of the supply voltage and the ground ...

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... NXP Semiconductors 7. Analog output The KMA199E provides one analog output signal on pin OUT/DIGINT. The measured angle For this purpose either a positive or a negative slope is provided. The following table describes the analog output behavior for a positive slope. If for example a magnetic field angle, larger than the programmed maximum angle smaller than the clamp switch angle set to the upper clamping voltage. But if the magnetic fi ...

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... NXP Semiconductors 8. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol amb T amb(pr) T stg EEPROM t ret(D) N endu(W_ER) [1] Time until sensor environment is initialized. [2] The maximum value of the output voltage is 5 Recommended operating conditions Table homogenous magnetic field. ...

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... NXP Semiconductors 11. Characteristics Table 9. Supply current Characteristics are valid for the operating conditions, as specified in Symbol Parameter I supply current DD [1] Normal operation mode. [2] Without load current at the analog output. Table 10. Power-on reset Characteristics are valid for the operating conditions, as specified in ...

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... NXP Semiconductors Table 11. System performance Characteristics are valid for the operating conditions, as specified in Symbol Parameter hysteresis error hys microlinearity error lin Z power-lost output O(pl) impedance [ nominal output voltage between 5 %V [2] In steps of resolution < 0.022 . [3] Activation is dependent on the programmed diagnostic mode. ...

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... NXP Semiconductors Table 13. Digital interface …continued Characteristics are valid for the operating conditions, as specified in Symbol Parameter T bit period deviation bit t slave takeover time tko(slv) t master takeover time tko(mas) t programming time prog t charge pump time cp 12. Definition of errors 12.1 General Angular measurement errors by the KMA199E result from linearity errors, temperature drift errors and hysteresis errors ...

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... NXP Semiconductors Fig 6. Definition of the hysteresis error 12.3 Linearity error The deviation of the KMA199E output signal from a best straight line slope as the reference line, is defined as linearity error. For measurement of this linearity error, the magnetic field angle is varied at fixed temperatures. The deviation of the output signal from the best straight line at the given temperature is the linearity error function of the magnetic fi ...

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... NXP Semiconductors 12.5 Temperature drift error The temperature drift versus the temperature range considered as the pure thermal effect. Fig 9. Definition of the temperature drift error Following mathematical description is given for temperature drift value ( ) temp with temperature for maximum temperature for minimum ...

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... NXP Semiconductors For programming the command mode has to be entered. In this mode the customer can adjust all required parameters (like zero angle and angular range for example) to his own application. The data can be stored in the EEPROM, after enabling the internal charge ...

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... NXP Semiconductors Fig 11. OWI start and stop condition Figure 12 Here the pulse width bit Fig 12. OWI timing 13.3 Sending and receiving data For sending or receiving data, the master has to control the communication. The command byte defines the region, address and type of command, which is requested by the master, that is either a read or a write command ...

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... NXP Semiconductors A more detailed description of all registers, that can be accessed by the customer, is given in Section the address and write or read request respectively, is listed there. 13.3.1 Write access In order to write data into the EEPROM, the internal charge pump must be enabled at first by setting the bits EEP_CP_CLOCK_EN and EEP_WRITE_EN and waiting for t Afterwards the following procedure must be done: • ...

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... NXP Semiconductors 13.3.2 Read access In order to read data from the sensor, the following procedure must be done: • Start condition: The master drives a rising edge after a LOW level • Command: The master sends a read command, that is the last bit is set • Handover: The master sends a handover bit, that is a logic 0 and disables his output after a three-quarter bit period • ...

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... NXP Semiconductors 13.3.3 Entering the command mode After a power-on reset, the sensor provides a time slot t mode. For this purpose a specific command sequence has to be sent (see Without entering the command mode, the sensor starts in normal operation mode. However the signature can always be written by the master, if the sensor switches into diagnostic mode ...

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... NXP Semiconductors 13.4.1 Software example #include <stdio.h.> calc_crc accepts unsigned 16-bit data in data 4 int calc_crc(int crc, unsigned int data const int gpoly = 0x107; // generator polynomial 7 int i; 8 for (i = 15; i >= 0; i--) 9 crc << crc = (int) ((data & (1u<<i))>>i XOR of with generator polynomial when MSB(9) = HIGH 12 if (crc & ...

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... NXP Semiconductors 13.5 Registers 13.5.1 Command registers In order to enter the command mode, the signature given in the OWI into the specific register. This must be done as described in a write command, followed by the signature, but after a power-on reset and not later than t cmd(ent) Table 16 ...

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... NXP Semiconductors 13.5.2 EEPROM registers The device includes several internal registers, which are used for purposes, such as customization and identification. The initial signature allows read access to all areas, but write access just to customer registers only. Write accesses to reserved areas are ignored. Since these registers are implemented as EEPROM cells, writing to the registers needs a specifi ...

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... NXP Semiconductors Table 17. EEPROM registers …continued Address Command Register write/read Fh 1Eh/1Fh EEP_CTRL_CUST [1] Variable and individual for each device. [2] Undefined; must be written as zero for default. Table 18. ZERO_ANGLE - mechanical zero degree position (address 7h) bit allocation Data format: unsigned fixed point; resolution: 2 Bit ...

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... NXP Semiconductors [1] Undefined; must be written as zero for default and may return any value when read. Values 0 to 255 are reserved not permitted to use such values. Examples: • 100 %V • • Table 21. CLAMP_HI - upper clamping level output voltage (address Bh) bit allocation Data format: integer (DAC values 256 to 4864) ...

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... NXP Semiconductors 14. Electromagnetic compatibility EMC is achieved by the KMA199E. 14.1 Emission (CISPR 25) Tests according to CISPR 25 were fulfilled. 14.1.1 Conducted radio disturbance Test of the device according to CISPR 25, chapter 11 (artificial network). Class: 5. 14.1.2 Radiated radio disturbance Test of the device according to CISPR 25, chapter 13 (anechoic chamber - component/module) ...

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... NXP Semiconductors Test level: 200 V/m with C State deviation of ISO 11452-5 the measurement must be taken GHz. 14.2.4 Immunity against mobile phones Tests according to ISO 11452-2 were fulfilled. State: A. Definition of Global System for Mobile Communications (GSM) signal: • Pulse modulation: per GSM specification (217 Hz; 12.5 % duty cycle) • ...

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... NXP Semiconductors Test time: 10 min. Transient transmission by capacitive and inductive coupling via lines other than supply lines (interface, analog output) have to be tolerated according to ISO 7637-3 (pulses 3a and 3b). 15. ElectroStatic Discharge (ESD) To raise immunity against ESD pulses, protection diodes are implemented into the KMA199E ...

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... NXP Semiconductors 17. Marking Fig 17. Marking 18. Terminals Lead frame material: CuZr with 99 and 0 Lead finish: matt tin; thickness KMA199E_1 Product data sheet 2.1 min X Marking paint: laser Code: see drawing Type face: DIN 1451 condensed type Letter height: 0.8 mm Line spacing: 0.25 mm Crossing of lines not allowed A: leading letters of type number (5 characters max ...

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... NXP Semiconductors 19. Package outline Plastic single-ended multi-chip package; 6 interconnections; 3 in-line leads (1) (1) A (1) 1 DIMENSIONS (mm are the original dimensions) UNIT 1.65 0.41 1.57 0.30 4.1 mm 1.45 0.34 1.47 0.24 3.9 Note 1. Terminals within this zone are uncontrolled to allow for flow of plastic between and besides the leads. ...

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... NXP Semiconductors 20. Handling information (1) No bending allowed. (2) Plastic body and interface plastic body - leads: application of bending forces not allowed. Fig 19. Bending recommendation 21. Solderability information The solderability qualification is done according to AEC-Q100, Rev-E. Recommended soldering process for leaded devices is wave soldering. The maximum soldering temperature is 260 C for maximum 5 s ...

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... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...

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... NXP Semiconductors 25. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 5 Functional description . . . . . . . . . . . . . . . . . . . 4 5.1 Angular measurement directions . . . . . . . . . . . 4 6 Diagnostic features . . . . . . . . . . . . . . . . . . . . . . 5 6.1 EEPROM CRC and EDC supervision 6.2 Magnet-lost detection . . . . . . . . . . . . . . . . . . . . 5 6.3 Power-lost detection . . . . . . . . . . . . . . . . . . . . . 6 6 ...

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