KMZ10A NXP Semiconductors, KMZ10A Datasheet - Page 4

• Manufacturer Part Number: KMZ10A
• Manufacturer: NXP Semiconductors

Specifications of KMZ10A

• Lead Free Status / Rohs Status: Not Compliant

Philips Semiconductors
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
Notes
1. Before first operation or after operation outside the SOAR (Fig.4) the sensor has to be reset by application of an
2. No disturbing field (H
3.
1998 Mar 24
R
H
S
TCV
R
TCR
V
TCV
FL
FH
f
SYMBOL
SYMBOL
amb
offset
th j-a
y
bridge
Magnetic field sensor
auxiliary field H
decrease of sensitivity.
S
= 25 C; H
O
offset
bridge
=
--------------------------------------------------------------------------------------------------------------- -
V
O
thermal resistance from junction to ambient
magnetic field strength
sensitivity
temperature coefficient of
output voltage
bridge resistance
temperature coefficient of
bridge resistance
offset voltage
offset voltage drift
linearity deviation of output
voltage
hysteresis of output voltage
operating frequency
at H
x
= 0.5 kA/m; notes 1 and 2; V
y
x
PARAMETER
=
= 3 kA/m.
0.4 kA m
d
0.4 V
) allowed; for stable operation under disturbing conditions see Fig.4 (SOAR) and see Fig.5 for
CC
–
PARAMETER
V
O
at H
note 2
notes 2 and 3
V
T
I
T
T
T
H
H
H
CC
amb
amb
bridge
bridge
CC
y
y
y
y
= 0 to 0.25 kA/m
= 0 to 0.4 kA/m
= 0 to 0.5 kA/m
CC
= 3 mA;
= 5 V;
=
= 25 to +125 C
= 25 to +125 C
= 5 V unless otherwise specified.
0
CONDITIONS
= 25 to +125 C
= 25 to +125 C
.
4
13
0.8
0
0.5
1.5
6
MIN.
VALUE
180
0.25
0.4
0.15
TYP.
19
1.6
+1.5
0.8
2.5
4.0
0.5
1
0.5
6
Product specification
MAX.
KMZ10A
UNIT
K/W
kA/m
%/K
%/K
k
%/K
mV/V
% FS
% FS
% FS
% FS
MHz
mV V
---------------- -
kA m
---------------
V V
UNIT
K