MCH6604-TL-E ON Semiconductor, MCH6604-TL-E Datasheet - Page 2

• Manufacturer Part Number: MCH6604-TL-E
• Description: MOSFET N-CH DUAL 50V 250MA MCPH6
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of MCH6604-TL-E

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 250mA
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 1.57nC @ 10V
• Input Capacitance (ciss) @ Vds: 6.6pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Continued from preceding page.
Package Dimensions
unit : mm
7022A-006
Switching Time Test Circuit
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
PW=10 s
D.C. 1%
P.G
4V
0V
V IN
V IN
6
1
6
1
0.65
Parameter
G
2.0
50
5
2
5
2
4
3
3
4
0.3
V DD =25V
D
S
0.15
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
R L =500
I D =50mA
MCH6604
0 to 0.02
V OUT
Symbol
t d (on)
t d (off)
V SD
Qgs
Qgd
Qg
t r
t f
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =10V, V GS =10V, I D =100mA
V DS =10V, V GS =10V, I D =100mA
V DS =10V, V GS =10V, I D =100mA
I S =100mA, V GS =0V
MCH6604
Conditions
Electrical Connection
6
1
5
2
min
4
3
Ratings
typ
1.57
0.20
0.32
0.85
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top view
190
105
18
42
max
1.2
No.6459-2/5
Unit
nC
nC
nC
ns
ns
ns
ns
V