MCH6604-TL-E ON Semiconductor, MCH6604-TL-E Datasheet - Page 4

• Manufacturer Part Number: MCH6604-TL-E
• Description: MOSFET N-CH DUAL 50V 250MA MCPH6
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of MCH6604-TL-E

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 250mA
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 1.57nC @ 10V
• Input Capacitance (ciss) @ Vds: 6.6pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.01
0.01
100
0.1
1.0
0.1
1.0
10
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
2
7
5
3
2
7
5
3
2
0.5
1.0
0
Ta=25 C
Single pulse
Mounted on a ceramic board (900mm
I D =0.25A
I DP =1A
Operation in this
area is limited by R DS (on).
5
0.6
2
10
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
Diode Forward Voltage, V SD -- V
3
0.7
15
5
I S -- V SD
20
0.8
7
A S O
25
10
0.9
Ciss
Coss
Crss
2
30
0.8mm) 1unit
2
35
1.0
3
40
PW 10 s
V GS =0V
1.1
f=1MHz
5
100 s
45
IT00062
IT00064
IT01739
7
100
1.2
MCH6604
50
1000
100
1.0
0.8
0.6
0.4
0.2
10
10
0.01
0
7
5
3
2
7
5
3
2
9
8
7
6
5
4
3
2
1
0
0
0
V DS =10V
I D =100mA
0.2
20
0.4
Ambient Temperature, Ta -- C
40
Total Gate Charge, Qg -- nC
2
Drain Current, I D -- A
0.6
SW Time -- I D
60
V GS -- Qg
P D -- Ta
0.8
3
80
t d (off)
t d (on)
1.0
t f
t r
100
1.2
5
120
1.4
V DD =25V
V GS =4V
7
No.6459-4/5
140
1.6
IT00063
IT00065
IT01740
0.1
1.8
160