EMH2604-TL-H ON Semiconductor, EMH2604-TL-H Datasheet - Page 2
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EMH2604-TL-H
Manufacturer Part Number
EMH2604-TL-H
Description
MOSFET N/P-CH 20V 4A EMH8
Manufacturer
ON Semiconductor
Series
-r
Datasheet
1.EMH2604-TL-H.pdf
(6 pages)
Specifications of EMH2604-TL-H
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4A, 3A
Vgs(th) (max) @ Id
-
Gate Charge (qg) @ Vgs
4.7nC @ 4.5V
Input Capacitance (ciss) @ Vds
345pF @ 10V
Power - Max
1.2W
Mounting Type
*
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Electrical Characteristics at Ta=25°C
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Parameter
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
V (BR)DSS
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
I DSS
I GSS
V GS (off)
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
I D =1mA, V GS =0V
V DS =20V, V GS =0V
V GS =±8V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =2A
I D =4A, V GS =4.5V
I D =1A, V GS =2.5V
I D =0.5A, V GS =1.8V
I D =--1mA, V GS =0V
V DS =--20V, V GS =0V
V GS =±8V, V DS =0V
V DS =--10V, I D =--1mA
V DS =--10V, I D =--1.5A
I D =--3A, V GS =--4.5V
I D =--1A, V GS =- -2.5V
I D =--0.5A, V GS =--1.8V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =10V, V GS =4.5V, I D =4A
V DS =10V, V GS =4.5V, I D =4A
V DS =10V, V GS =4.5V, I D =4A
I S =4A, V GS =0V
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =--10V, V GS =--4.5V, I D =--3A
V DS =--10V, V GS =--4.5V, I D =--3A
V DS =--10V, V GS =--4.5V, I D =--3A
I S =--3A, V GS =0V
EMH2604
Conditions
min
--0.4
--20
0.4
20
Ratings
typ
--0.83
0.65
320
345
155
3.4
9.2
4.7
1.6
0.8
3.6
7.1
4.0
0.6
1.1
34
49
74
67
52
65
98
66
50
21
37
32
60
30
38
max
--1.3
--1.2
±10
±10
115
137
235
1.3
1.2
45
67
--1
85
1
No.9006-2/6
Unit
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
S
S
V
V
V
V
V
V