EMH2604-TL-H ON Semiconductor, EMH2604-TL-H Datasheet - Page 4

• Manufacturer Part Number: EMH2604-TL-H
• Description: MOSFET N/P-CH 20V 4A EMH8
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of EMH2604-TL-H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A, 3A
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 4.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 345pF @ 10V
• Power - Max: 1.2W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
100
1.0
0.1
10
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
7
5
3
2
7
5
3
2
0.01
0.01
5
3
2
7
5
3
2
7
5
3
2
0
0
0
0
V DS =10V
V DS =10V
I D =4A
--0.1
0.5
2
2
3
3
--0.2
1.0
Drain-to-Source Voltage, V DS -- V
5 7
5 7
Total Gate Charge, Qg -- nC
--0.3
1.5
Drain Current, I D -- A
Drain Current, I D -- A
0.1
SW Time -- I D
0.1
V GS -- Qg
|
--0.4
I D -- V DS
2.0
y
fs | -- I D
2
2
--0.5
2.5
3
3
5 7
--0.6
3.0
5 7
1.0
--0.7
3.5
1.0
V GS = --1.2V
2
--0.8
4.0
V DD =10V
V GS =4.5V
2
3
3
--0.9
4.5
IT13503
5
IT13505
IT13507
IT14533
[Nch]
[Nch]
[Nch]
[Pch]
5 7
7
--1.0
5.0
10
EMH2604
1000
0.01
0.01
--5.0
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
100
100
1.0
0.1
1.0
0.1
10
0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0.1
0
0
V DS = --10V
Ta=25° C
Single pulse
When mounted on ceramic substrate (900mm
Operation in this
area is limited by R DS (on).
--0.2
2 3
2
--0.4 --0.6 --0.8
5 7
0.3
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
4
Drain-to-Source Voltage, V DS -- V
Diode Forward Voltage, V SD -- V
Gate-to-Source Voltage, V GS -- V
0.1
6
2
3
I D -- V GS
I S -- V SD
0.5
8
5 7
--1.0
A S O
1.0
10
--1.2
2
0.7
12
--1.4
3
2
5 7
×0.8mm)
14
--1.6
10
0.9
16
--1.8
2 3
V GS =0V
f=1MHz
No.9006-4/6
--2.0
18
IT13504
IT13506
IT16454
IT14534
[Nch]
[Nch]
[Nch]
[Pch]
5
7
--2.2
100
1.1
20