AON7900 Alpha & Omega Semiconductor Inc, AON7900 Datasheet - Page 6

• Manufacturer Part Number: AON7900
• Description: MOSFET 2N-CH 30V 24A/40A DFN
• Manufacturer: Alpha & Omega Semiconductor Inc
• Series: -r

Specifications of AON7900

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 24A, 40A
• Vgs(th) (max) @ Id: 2.3V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 15V
• Power - Max: 17W, 50W
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 785-1249-2

Rev 0: Sep 2010
Q2 Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
Q
t
t
t
t
t
Q
A. The value of R
dissipation P
user's specific board design.
B. The power dissipation P
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
G. These tests are performed with the device mounted on 1 in
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
J
FS
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
g
gs
gd
rr
=25°C.
(10V)
(4.5V)
DSS
θJA
is the sum of the thermal impedence from junction to case R
DSM
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
is based on R
θJA
is measured with the device mounted on 1in
D
is based on T
θJA
Parameter
and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
J
J(MAX)
=25°C unless otherwise noted)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
www.aosmd.com
2
FR-4 board with 2oz. Copper, in a still air environment with T
Conditions
I
V
V
V
V
V
V
V
I
V
V
V
V
R
I
2
J(MAX)
D
S
F
F
FR-4 board with 2oz. Copper, in a still air environment with T
DS
DS
DS
GS
GS
GS
DS
G
GS
GS
GS
GS
=13A, dI/dt=500A/µs
=13A, dI/dt=500A/µs
=250µA, V
=1A,V
GEN
=30V, V
=0V, V
=V
=10V, V
=10V, I
=4.5V, I
=5V, I
=0V, V
=0V, V
=10V, V
=10V, V
=150°C. Ratings are based on low frequency and duty cycles to keep initial
=3Ω
θJC
GS
GS
and case to ambient.
I
D
D
=0V
GS
DS
DS
=13A
D
=250µA
D
GS
DS
DS
DS
=13A
GS
= ±20V
=10A
=15V, f=1MHz
=0V, f=1MHz
=0V
=5V
=15V, I
=15V, R
=0V
D
=13A
L
T
=1.2Ω,
T
J
=125°C
J
=55°C
1400
Min
150
580
1.3
0.7
30
43
21
13
27
9
1770
Typ
830
1.8
5.5
7.5
6.7
0.7
1.4
50
72
27
12
27
17
34
4
5
7
3
6
A
=25°C.
A
=25°C. The Power
2130
1080
Max
100
120
2.3
6.7
8.5
2.1
40
33
15
21
41
1
5
9
AON7900
Page 6 of 10
Units
mΩ
mΩ
nC
nC
nC
nC
nC
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
A
S
V
A