AUIRF7207Q International Rectifier, AUIRF7207Q Datasheet

AUIRF7207Q

Manufacturer Part Number

AUIRF7207Q

Description

MOSFET Power

Manufacturer

International Rectifier

Datasheet

1.AUIRF7207Q.pdf (10 pages)

Specifications of AUIRF7207Q

Configuration

Single Quad Drain Triple Source

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

60 mOhms

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 12 V

Continuous Drain Current

5.4 A

Power Dissipation

2.5 W

Mounting Style

SMD/SMT

Package / Case

SOIC N

Gate Charge Qg

15 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AUIRF7207Q

Manufacturer:

Quantity:

4 594

Company:

Meier Automation Equipment Co., Limited

Part Number:

AUIRF7207Q

Manufacturer:

Quantity:

20 000

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Features

Description

Specifically designed for Automotive applications,

this cellular design of HEXFET® Power MOSFETs

utilizes the latest processing techniques to achieve

low on-resistance per silicon area. This benefit com-

bined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely

efficient and reliable device for use in Automotive

and a wide variety of other applications.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

These are stress ratings only; and functional operation of the device at these or any other condition beyond those

indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods

may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted

and still air conditions. Ambient temperature (T

www.irf.com

dv/dt

Thermal Resistance

HEXFET

*Qualification standards can be found at http://www.irf.com/

GSM

STG

θJA

@ T

Advanced Process Technology

Low On-Resistance

P-Channel MOSFET

Dynamic dV/dT Rating

150°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free, RoHS Compliant

Automotive Qualified*

= 25°C

= 70°C

= 25°C

= 70°C

is a registered trademark of International Rectifier.

Drain-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Gate-to-Source Voltage Single Pulse tp<10μs

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Junction-to-Ambient

Power Dissipation

Parameter

AUTOMOTIVE GRADE

) is 25°C, unless otherwise specified.

@ -10V

Top View

(BR)DSS

DS(on)

HEXFET

AUIRF7207Q

-55 to + 150

SO-8

Max.

0.02

-5.4

-4.3

± 12

140

-5.0

-20

-43

2.5

-16

1.6

max.

Power MOSFET

0.06Ω

-20V

PD - 97641

-5.4

Units

W/°C

°C/W

V/ns

°C

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