AUIRF7207Q International Rectifier, AUIRF7207Q Datasheet - Page 6

• Manufacturer Part Number: AUIRF7207Q
• Description: MOSFET Power
• Manufacturer: International Rectifier

Specifications of AUIRF7207Q

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 60 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5.4 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Package / Case: SOIC N
• Gate Charge Qg: 15 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

6
6.0
5.0
4.0
3.0
2.0
1.0
0.0
100
0.1
10
0.00001
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
400
300
200
100
0
25
0.1
Fig 10. Maximum Avalanche Energy
Starting T , Junction Temperature ( C)
50
1. Duty factor D = t / t
2. Peak T = P
Notes:
Vs. Drain Current
J
1
J
75
DM
x Z
1
thJA
100
P
2
DM
TOP
BOTTOM
+ T
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10
A
t
1
125
t
2
-2.4A
-4.3A
-5.4A
°
I D
150
100