AUIRF7416Q International Rectifier, AUIRF7416Q Datasheet
![no-image](/images/manufacturer_photos/0/3/338/international_rectifier_sml.jpg)
AUIRF7416Q
Manufacturer Part Number
AUIRF7416Q
Description
MOSFET Power
Manufacturer
International Rectifier
Datasheet
1.AUIRF7416Q.pdf
(12 pages)
Specifications of AUIRF7416Q
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
35 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 10 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Package / Case
SOIC-8
Gate Charge Qg
61 nC
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AUIRF7416QTRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Features
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Description
Specifically designed for Automotive applications, this cel-
lular design of HEXFET® Power MOSFETs utilizes the lat-
est processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automo-
tive and a wide variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifica-
tions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The
thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature
(T
HEXFET
*Qualification standards can be found at http://www.irf.com/
I
I
I
P
V
E
dv/dt
T
T
R
Thermal Resistance
D
D
DM
D
GS
AS
J
STG
A
θJA
) is 25°C, unless otherwise specified.
@ T
@ T
Advanced Process Technology
Low On-Resistance
P-Channel MOSFET
Dynamic dV/dT Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free, RoHS Compliant
Automotive Qualified*
@T
A
A
A
= 25°C
= 70°C
®
= 25°C
is a registered trademark of International Rectifier.
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Junction-to-Ambient
Power Dissipation
g
Parameter
Parameter
AUTOMOTIVE GRADE
e
GS
GS
@ -10V
@ -10V
d
G
S
S
S
1
2
3
4
Top View
8
7
6
5
D
D
D
D
A
V
R
I
D
(BR)DSS
DS(on)
-55 to + 150
AUIRF7416Q
HEXFET
Max.
Max.
0.02
-7.1
± 20
370
-5.0
-10
-45
2.5
SO-8
50
max.
®
Power MOSFET
0.02 Ω
-10A
-30V
mW/°C
Units
Units
°C/W
These are
V/ns
mJ
°C
W
A
V
1