AUIRF7416Q International Rectifier, AUIRF7416Q Datasheet - Page 5

• Manufacturer Part Number: AUIRF7416Q
• Description: MOSFET Power
• Manufacturer: International Rectifier

Specifications of AUIRF7416Q

• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 10 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Gate Charge Qg: 61 nC
• Lead Free Status / Rohs Status: Details

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4000
3000
2000
1000
100
10
0
1
0.4
1
V
T = 150°C
-V
J
DS
SD
V
C
C
C
0.6
C
C
C
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
GS
iss
rss
oss
oss
rss
iss
= 0V,
= C
= C
= C
gs
gd
ds
+ C
+ C
0.8
10
gd
gd
f = 1MHz
T = 25°C
J
, C
ds
1.0
SHORTED
V
GS
= 0V
100
1.2
A
A
100
10
1
20
16
12
0.1
8
4
0
0
T
T
Single Pulse
A
J
I
D
= 25 C
= 150 C
= -5.6A
OPERATION IN THIS AREA LIMITED
-V
DS
°
°
20
Q , Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
G
1
BY R
40
V
V
DS
DS
DS(on)
= -24V
= -15V
FOR TEST CIRCUIT
60
SEE FIGURE 9
10
80
100us
1ms
10ms
100
5
100
A