STP11N52K3 STMicroelectronics, STP11N52K3 Datasheet - Page 3

• Manufacturer Part Number: STP11N52K3
• Description: MOSFET Power N-Ch 525V 0.41 Ohm 10A SuperMESH3 125w
• Manufacturer: STMicroelectronics

Specifications of STP11N52K3

• Lead Free Status / Rohs Status: Details

STB11N52K3, STF11N52K3, STP11N52K3
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
V
Symbol
Symbol
R
R
dv/dt
R
ESD(G-S)
I
P
DM
thj-case
V
thj-amb
V
V
E
thj-pcb
T
I
SD
T
T
I
I
TOT
AR
ISO
DS
GS
stg
AS
D
D
J
J
(2)
(3)
≤ 10 A, di/dt ≤ 400 A/µs, V
Thermal resistance junction-case max
Thermal resistance junction-amb max
Thermal resistance junction-pcb max
Maximum lead temperature for soldering
purpose
Drain- source voltage
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
Single pulse avalanche energy
(starting T
Gate source ESD(HBM-C = 100 pF,
R = 1.5 kΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T
Operating junction temperature
Storage temperature
Absolute maximum ratings
Thermal data
C
J
= 25 °C)
= 25 °C, I
Parameter
Parameter
C
Doc ID 018868 Rev 2
D
DD
= 25 °C
= I
= 80% V
AR
, V
C
C
DD
(BR)DSS
= 25 °C
= 100 °C
J
= 50 V)
max)
TO-220, D²PAK
TO-220
1
125
10
40
6
62.50
300
- 55 to 150
TO-220FP
Value
Value
±
2500
525
170
4.17
12
5
30
TO-220FP
Electrical ratings
40
10
2500
6
30
(1)
(1)
(1)
D²PAK
30
1
°C/W
°C/W
°C/W
°C/W
Unit
V/ns
Unit
mJ
°C
W
V
V
A
A
A
A
V
3/20