STP11N52K3 STMicroelectronics, STP11N52K3 Datasheet - Page 5

• Manufacturer Part Number: STP11N52K3
• Description: MOSFET Power N-Ch 525V 0.41 Ohm 10A SuperMESH3 125w
• Manufacturer: STMicroelectronics

Specifications of STP11N52K3

• Lead Free Status / Rohs Status: Details

STB11N52K3, STF11N52K3, STP11N52K3
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 8.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Symbol
I
BV
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
GSO
rr
rr
rr
rr
(2)
(1)
Gate-source breakdown
voltage
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Doc ID 018868 Rev 2
Igs=± 1 mA (open drain)
I
I
V
(see Figure 19)
I
V
(see Figure 19)
SD
SD
SD
DD
DD
= 10 A, V
= 10 A, di/dt = 100 A/µs
= 10 A, di/dt = 100 A/µs
= 60 V
= 60 V T
Test conditions
Test conditions
J
GS
= 150 °C
= 0
Electrical characteristics
Min.
Min. Typ. Max Unit
30
-
-
-
-
2700
3400
Typ.
270
320
20
22
-
Max. Unit
1.5
10
40
-
nC
nC
ns
ns
5/20
A
A
V
A
A
V