BCR112E6327XT Infineon Technologies, BCR112E6327XT Datasheet - Page 5

• Manufacturer Part Number: BCR112E6327XT
• Manufacturer: Infineon Technologies

Specifications of BCR112E6327XT

• Transistor Polarity: NPN
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 20
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / Rohs Status: Compliant

Total power dissipation P
BCR112
Total power dissipation P
BCR112W
mW
mW
300
250
225
200
175
150
125
100
300
250
225
200
175
150
125
100
75
50
25
75
50
25
0
0
0
0
15
15
30
30
45
45
60
60
75
75
90 105 120 °C
90 105 120 °C
tot
tot
= (T
= (T
S
S
)
)
T
T
S
S
150
150
5
Total power dissipation P
BCR112F
Permissible Pulse Load R
BCR112
K/W
mW
10
300
250
225
200
175
150
125
100
10
10
10
10
75
50
25
-1
0
3
2
1
0
10
0
-6
15
10
30
-5
45
10
-4
60
75
10
-3
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
90 105 120 °C
tot
thJS
10
= (T
BCR112...
-2
=
2007-09-17
S
(t
)
s
T
p
t
p
S
)
150
10
0