JANTX2N6764 International Rectifier, JANTX2N6764 Datasheet

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JANTX2N6764

Manufacturer Part Number
JANTX2N6764
Description
Manufacturer
International Rectifier
Type
Power MOSFETr
Datasheet

Specifications of JANTX2N6764

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.065Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Continuous Drain Current
38A
Power Dissipation
150W
Operating Temp Range
-55C to 125C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
2 +Tab
Package Type
TO-204AA
Lead Free Status / Rohs Status
Not Compliant

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Part Number:
JANTX2N6764
Manufacturer:
ST
0
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
For footnotes refer to the last page
Absolute Maximum Ratings
I D @ V GS = 10V, T C = 25°C
I D @ V GS = 10V, T C = 100°C
The HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
www.irf.com
Part Number
IRF150
P D @ T C = 25°C
T STG
dv/dt
I D M
E AR
E AS
V GS
I AR
T J
B
100V
VDSS
R
0.055
DS(on)
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
38A
I
D
[REF:MIL-PRF-19500/543]
300 (0.063 in. (1.6mm) from case for 10s)
Features:
n
n
n
n
n
100V, N-CHANNEL
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
11.5 (typical)
-55 to 150
JANTXV2N6764
152
150
±20
150
1.2
5.5
JANTX2N6764
38
24
38
15
TO-3
IRF150
PD - 90337G
Units
W/°C
V/ns
08/21/01
o
mJ
mJ
W
A
A
V
C
g
1

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JANTX2N6764 Summary of contents

Page 1

... For footnotes refer to the last page www.irf.com [REF:MIL-PRF-19500/543] 100V, N-CHANNEL I D 38A Features: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling 300 (0.063 in. (1.6mm) from case for 10s 90337G IRF150 JANTX2N6764 JANTXV2N6764 TO-3 Units 152 150 W 1.2 W/°C ±20 V 150 5.5 ...

Page 2

IRF150 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain ...

Page 3

Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF150 3 ...

Page 4

IRF150 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area www.irf.com 13 a& b ...

Page 5

Fig 9. Maximum Drain Current Vs. Case Temperature Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com D.U. Pulse Width µs Duty Factor Fig 10a. Switching Time Test Circuit V ...

Page 6

IRF150 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G ...

Page 7

Foot Notes: Repetitive Rating; Pulse width limited by maximum junction temperature =50V, starting 25°C, Peak 38A =10V Case Outline and Dimensions —TO-204AE (Modified TO-3) IR WORLD HEADQUARTERS: 233 Kansas St., ...

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