JANTX2N6764 International Rectifier, JANTX2N6764 Datasheet - Page 2

• Manufacturer Part Number: JANTX2N6764
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of JANTX2N6764

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.065Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 38A
• Power Dissipation: 150W
• Operating Temp Range: -55C to 125C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 2 +Tab
• Package Type: TO-204AA
• Lead Free Status / Rohs Status: Not Compliant

Source-Drain Diode Ratings and Characteristics
Thermal Resistance
R thJA
Electrical Characteristics
For footnotes refer to the last page
IRF150
R thJC
BV DSS
R DS(on)
V GS(th)
g fs
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d
t r
t d
t f
L S + L D
C iss
C oss
C rss
I S
I SM
V SD
t rr
Q RR Reverse Recovery Charge
t on
BV DSS / T J Temperature Coefficient of Breakdown
(on)
2
(off)
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Forward Turn-On Time
Parameter
Junction to Case
Junction to Ambient
Parameter
Drain-to-Source Breakdown Voltage
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
@ Tj = 25°C (Unless Otherwise Specified)
Min Typ Max Units
—
—
Min Typ Max Units
—
—
—
—
—
Min
100
2.0
9.0
8.0
—
—
—
—
—
50
25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3700
1100
0.83
Typ Max Units
0.13
200
6.1
30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
152
500
2.9
1.9
38
0.055
0.065
°C/W
-100
250
100
190
170
130
125
4.0
25
22
65
35
—
—
—
—
—
—
µc
nS
V
A
S ( )
V/°C
nH
nA
ns
V
nC
pF
V
A
Typical socket mount
T j = 25°C, I F = 38A, di/dt 100A/ s
T
j
= 25°C, I S =38A, V GS = 0V
Measured from the center of
drain pad to center of source
pad
Reference to 25°C, I D = 1.0mA
V DS = V GS , I D =250µA
V GS = 0V, I D = 1.0mA
V GS = 10V, I D =24A
V GS =10V, I D =38A
V DS > 15V, I DS =24A
V GS = 0V, T J = 125°C
V GS =10V, ID = 38A
Test Conditions
Test Conditions
V GS = 0V, V DS =25V
Test Conditions
V DS =80V, V GS =0V
V DD =50V, I D =38A,
V GS =10V,R G =2.35
V DD
f = 1.0MHz
V DS =80V
V DS =50V
V GS =-20V
V GS =20V
30V
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