STM32F417IGT6 STMicroelectronics, STM32F417IGT6 Datasheet - Page 77

• Manufacturer Part Number: STM32F417IGT6
• Description: Microcontrollers (MCU) ARM M4 1024 FLASH 168 Mhz 192kB SRAM
• Manufacturer: STMicroelectronics

Specifications of STM32F417IGT6

• Core: ARM Cortex M4
• Processor Series: STM32F4
• Data Bus Width: 32 bit
• Maximum Clock Frequency: 168 MHz
• Program Memory Size: 1024 KB
• Data Ram Size: 192 KB
• On-chip Adc: Yes
• Number Of Programmable I/os: 140
• Number Of Timers: 10
• Operating Supply Voltage: 1.7 V to 3.6 V
• Package / Case: LQFP-176
• Mounting Style: SMD/SMT
• A/d Bit Size: 12 bit
• A/d Channels Available: 24
• Interface Type: CAN, I2C, I2S, SPI, UART
• Program Memory Type: Flash
• Lead Free Status / Rohs Status: Details

STM32F415xx, STM32F417xx
Table 20.
Table 21.
1. TBD stands for “to be defined”.
2. Based on characterization, not tested in production.
I
Symbol
DD_STOP
I
Symbol
DD_STBY
Supply current
in Stop mode
with main
regulator in
Run mode
Supply current
in Stop mode
with main
regulator in
Low Power
mode
Supply current
in Standby
mode
Parameter
Parameter
Typical and maximum current consumptions in Stop mode
Typical and maximum current consumptions in Standby mode
Flash in Stop mode, low-speed and high-speed
internal RC oscillators and high-speed
oscillator OFF (no independent watchdog)
Flash in Deep power down mode, low-speed
and high-speed internal RC oscillators and
high-speed oscillator OFF (no independent
watchdog)
Flash in Stop mode, low-speed and high-speed
internal RC oscillators and high-speed
oscillator OFF (no independent watchdog)
Flash in Deep power down mode, low-speed
and high-speed internal RC oscillators and
high-speed oscillator OFF (no independent
watchdog)
Backup SRAM ON, low-speed
oscillator and RTC ON
Backup SRAM OFF, low-
speed oscillator and RTC ON
Backup SRAM ON, RTC OFF
Backup SRAM OFF, RTC OFF
Conditions
Conditions
Doc ID 022063 Rev 2
V
1.8 V
3.0
2.4
2.4
1.7
DD
=
T
A
V
2.4 V
= 25 °C
Typ
3.4
2.7
1.9
2.6
DD
=
25 °C
T
0.60
0.55
0.40
0.35
Typ
A
V
3.3 V
DD
4.0
3.3
3.0
2.2
=
=
25 °C
T
T
1.10
1.20
1.20
1.1
A
Electrical characteristics
A
TBD
TBD
12.5
9.8
= 85 °C T
=
(1)
V
(2)
(2)
(2)
(2)
DD
85 °C
11.00
11.00
T
Max
8.00
8.00
Max
A
= 3.6 V
=
A
TBD
TBD
24.8
19.2
= 105 °C
105 °C
20.00
20.00
15.00
15.00
T
(2)
(2)
(2)
(2)
A
=
77/168
Unit
µA
Unit
mA