RC28F128P33BF60A Micron Technology Inc, RC28F128P33BF60A Datasheet - Page 44

• Manufacturer Part Number: RC28F128P33BF60A
• Manufacturer: Micron Technology Inc

Specifications of RC28F128P33BF60A

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Figure 13: Reset Operation Waveforms
12.3
Datasheet
44
(A) Reset during
(B) Reset during
(C) Reset during
(D) VCC Power-up to
read mode
program or block erase
P1 ≤ P2
program or block erase
P1 ≥ P2
RST# high
Power Supply Decoupling
Flash memory devices require careful power supply de-coupling. Three basic power
supply current considerations are: 1) standby current levels; 2) active current levels;
and 3) transient peaks produced when CE# and OE# are asserted and deasserted.
When the device is accessed, many internal conditions change. Circuits within the
device enable charge-pumps, and internal logic states change at high speed. All of
these internal activities produce transient signals. Transient current magnitudes depend
on the device outputs’ capacitive and inductive loading. Two-line control and correct
de-coupling capacitor selection suppress transient voltage peaks.
Because Numonyx flash memory devices draw their power from VCC, VPP, and VCCQ,
each power connection should have a 0.1 µF ceramic capacitor to ground. High-
frequency, inherently low-inductance capacitors should be placed as close as possible
to package leads.
Additionally, for every eight devices used in the system, a 4.7 µF electrolytic capacitor
should be placed between power and ground close to the devices. The bulk capacitor is
meant to overcome voltage droop caused by PCB trace inductance.
RST# [P]
RST# [P]
RST# [P]
V
CC
V
V
V
V
0V
V
V
V
CC
IH
IH
IH
IL
IL
IL
P1
P2
P2
P3
Complete
Abort
Complete
Abort
Order Number: 208034-04
R5
R5
R5
P33-65nm
Jul 2011