CY8C5368LTI-026 Cypress Semiconductor Corp, CY8C5368LTI-026 Datasheet - Page 90

• Manufacturer Part Number: CY8C5368LTI-026
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY8C5368LTI-026

• Lead Free Status / Rohs Status: Compliant

11.7 Memory
Specifications are valid for –40 °C ≤ T
where noted.
11.7.1 Flash
Table 11-51. Flash DC Specifications
Table 11-52. Flash AC Specifications
Document Number: 001-66237 Rev. *A
T
T
T
Parameter
Parameter
WRITE
ERASE
BULK
Row write time (erase + program)
Row erase time
Row program time
Bulk erase time (256 KB)
Sector erase time (16 KB)
Total device program time
(including SWD and other overhead)
Flash data retention time, retention
period measured from last erase cycle
Erase and program voltage
Description
Description
A
≤ 85 °C and T
Figure 11-51. Clock to Output Performance
PRELIMINARY
J
V
≤ 100 °C, except where noted. Specifications are valid for 2.7 V to 5.5 V, except
Average ambient temp.
T
cycles
Average ambient temp.
T
cycles
DDD
A
A
≤ 55 °C, 100 K erase/program
≤ 85 °C, 10 K erase/program
pin
Conditions
Conditions
PSoC
®
5: CY8C53 Family Datasheet
Min
2.7
Min
20
10
–
–
–
–
–
–
Typ
Typ
15
10
–
5
–
–
–
–
–
Max
Max
5.5
140
20
13
15
20
7
–
–
Page 90 of 106
seconds
Units
Units
years
ms
ms
ms
ms
ms
V
[+] Feedback