BTS4175SGAXT Infineon Technologies, BTS4175SGAXT Datasheet - Page 15

• Manufacturer Part Number: BTS4175SGAXT
• Manufacturer: Infineon Technologies

Specifications of BTS4175SGAXT

• Switch Type: High Side
• Power Switch Family: BTS4175SGA
• Input Voltage: -10 to 16V
• Power Switch On Resistance: 0.175Ohm
• Output Current: 1.3A
• Number Of Outputs: 1
• Mounting: Surface Mount
• Package Type: DSO
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Pin Count: 8
• Power Dissipation: 1.5W
• Lead Free Status / Rohs Status: Compliant

In the case the supply voltage is in between of
follow the input. If the channel is in ON state, parameters are no longer warranted and lifetime is reduced
compared to normal mode. This specially impacts the short circuit robustness, as well as the maximum energy
E
6.4
In case of reverse polarity, the intrinsic body diode causes power dissipation. The current in this intrinsic body
diode is limited by the load itself. Additionally, the current into the ground path and the logical pins has to be limited
to the maximum current described in
application. The
R
for
replaced by a Shottky diode.
Figure 10
6.5
In case of overload, or short circuit to ground, the BTS4175SGA offers two protections mechanisms.
Current limitation
At first step, the instantaneous power in the switch is maintained to a safe level by limiting the current to the
maximum current allowed in the switch
the current flowing in the DMOS.
Thermal protection
At thermal shutdown, the device turns OFF and cools down. A restart mechanism is used, after cooling down, the
device restarts and limits the current to
of time.
Data Sheet
AS
ST
R
is used to limit the current in the logic of the device and in the ESD protection stage. The recommended value
the device can handle.
Micro controller
GND
(e.g. XC22xx)
is 150Ω, for
Reverse Polarity Protection
Reverse polarity protection with external components
Overload Protection
R
GND
R
R
resistor is used to limit the current in the zener protection of the device. Resistors
ST 0/1
ST
= 15kΩ. In case the over voltage is not considered in the application,
VccµC
R
STPU
ST
IN
Chapter
I
I
L(LIM)
L(SCR)
ZD
. During this time, the DMOS temperature is increasing, which affects
R
.
ESD
4.1, sometimes with an external resistor.
Figure 11
IN
V
S(SC) max
15
shows the behavior of the current limitation as a function
and
V
Z
dbody
DS(AZ)
GND
V
S
, the output transistor is still operational and
OUT
I
R
L(nom)
GND
-V
Figure 10
Protection Mechanisms
DS(REV)
Rev.1.0, 2008-04-29
Reverse Polarity single with diag.vsd
BTS4175SGA
shows a typical
R
GND
V
BAT
R
can be
IN
and