ARF1519 MICROSEMI, ARF1519 Datasheet
ARF1519
Specifications of ARF1519
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ARF1519 Summary of contents
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... RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE The ARF1519 power transistor designed for very high power scientifi c, commercial, medical and industrial RF power generator and amplifi er applications MHz. • Specifi ed 250 Volt, 13.56 MHz Characteristics: • Output Power = 750 Watts. • ...
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... MIN TYP MAX 4600 5600 310 350 90 120 MIN TYP MAX 200V Degradation in Output Power V > I (ON (ON)MAX 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE T = -55° +25° +125° GATE-TO-SOURCE VOLTAGE (VOLTS) GS Figure 2, Typical Transfer Characteristics ARF1519 UNIT pF UNIT ...
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... Figure 3, Typical Threshold Voltage vs Temperature 0.2 0.1 D=0.5 0.05 0.2 0.1 0.01 0.05 0.005 0.02 0.01 SINGLE PULSE 0.001 Figure 5, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration Table 1 - Typical Class AB Large Signal Impedance -- ARF1519 F (MHz (Ω) 2.0 10.6 -j 12.2 13.5 0 ...
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... ARF1519 -- 13.56 MHz Test Circuit Input 13.56 MHz Test Amp ARF1519 T1 J1 Thermal Considerations and Package Mounting: The rated 1350W power dissipation is only available when the package mounting surface is at 25°C and the junction temperature is 200°C. The thermal resistance between junctions and case mounting surface is 0.12° ...