MT47H128M8HQ-187EIT:G Micron Technology Inc, MT47H128M8HQ-187EIT:G Datasheet - Page 123
MT47H128M8HQ-187EIT:G
Manufacturer Part Number
MT47H128M8HQ-187EIT:G
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT47H128M8HQ-187EITG.pdf
(136 pages)
Specifications of MT47H128M8HQ-187EIT:G
Lead Free Status / Rohs Status
Compliant
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Figure 70: READ-to-Power-Down or Self Refresh Entry
Figure 71: READ with Auto Precharge-to-Power-Down or Self Refresh Entry
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. W 7/11 EN
DQS, DQS#
Command
DQS, DQS#
Command
Address
Address
CK#
CKE
A10
DQ
CK
CK#
CKE
A10
DQ
CK
Valid
READ
T0
Valid
READ
T0
Notes:
Notes:
NOP
T1
NOP
1. In the example shown, READ burst completes at T5; earliest power-down or self refresh
2. Power-down or self refresh entry may occur after the READ burst completes.
1. In the example shown, READ burst completes at T5; earliest power-down or self refresh
2. Power-down or self refresh entry may occur after the READ burst completes.
T1
RL = 3
entry is at T6.
entry is at T6.
RL = 3
NOP
T2
NOP
T2
NOP
T3
NOP
T3
DO
123
DO
DO
Valid
DO
T4
Valid
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DO
T4
DO
DO
1Gb: x4, x8, x16 DDR2 SDRAM
Valid
T5
DO
Valid
T5
Transitioning Data
Power-down 2 or
self refresh entry
Transitioning Data
NOP 1
self refresh 2 entry
Power-down or
T6
Power-Down Mode
2007 Micron Technology, Inc. All rights reserved.
NOP 1
T6
t CKE (MIN)
t CKE (MIN)
T7
Don’t Care
Don’t Care
T7
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